| 摘要: | 摘要： We present a solar cell with an FTO/MoSe 2 /perovskite/C 60 /bathocuproine (BCP)/silver structure. The hole-transport material (HTM), active photovoltaic layer, electron-transport layer, and electron-buffer layer were made of MoSe 2 , perovskite, C 60 , and BCP, respectively. The domain sizes of the CH 3 NH 3 PbI 3 (MAPbI 3 ) perovskite films that were deposited on the MoSe 2 HTM films following annealing at 500, 600, and 700 °C were determined to be 23, 25, and 27 nm, respectively, revealing that the domain size of the MAPbI 3 perovskite film increased with the annealing temperature of the MoSe 2 HTM film under it. Therefore, the crystallinities of the perovskite layers were improved by increasing the annealing temperatures of the HTM layers. Following optimization, the maximum power-conversion efficiency was 8.23%.
出版日期： 2016-12-01
出處： Applied physics express, 2016-12, Vol.9 (12), p.122301
資源來源： Institute of Physics Journals
識別號： ISSN: 1882-0778
識別號： EISSN: 1882-0786
識別號： DOI: 10.7567/APEX.9.122301 |
