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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/103735


    題名: Manipulating multicrystalline grain size in CH3NH3PbI3 thin films for application in photovoltaics
    作者: 張勝雄;Chen, Cheng-Chiang;Chang, Sheng Hsiung;Chen, Lung-Chien;Cheng, Hsin-Ming;Tseng, Zong-Liang;Wu, Chun-Guey
    貢獻者: 理學院光電科學與工程學系
    關鍵詞: CH3NH3PbI3 precursor concentration;Multicrystalline materials;Photoluminescence;Photovoltaics
    日期: 2016-12-01
    上傳時間: 2026-04-23 11:36:27 (UTC+8)
    出版者: Elsevier Ltd.;Elsevier Ltd
    摘要: 摘要: •High-quality CH3NH3PbI3 thin films were fabricated using a one-step spin-coating method.•The CH3NH3PbI3 thin film is a multicrystalline material.•The grain size in CH3NH3PbI3 thin films was increased from 230nm to 1340nm.•The VOC (average PCE) was improved from 0.85V (13.02%) to 0.9V (13.66%). The multicrystalline grain size of CH3NH3PbI3 thin films can be manipulated by using different precursor concentrations which dominate the competition between the nucleation and crystal growth during the one-step spin-coating process with the toluene washing treatment. A comprehensive study was carried out to explore the correlation between the structural properties and the exciton dynamics in CH3NH3PbI3 thin films fabricated using various precursor concentrations from 1.25M to 1.65M. The experimental results show that the precursor concentration influences the grain size and exciton dynamics of the resultant CH3NH3PbI3 thin films which were fabricated on top of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate/ITO/glass substrates. The higher average power conversion efficiency (PCE) of 13.66% achieved can be explained as being due to the formation of a larger CH3NH3PbI3 grain size which thus results in higher photocurrent generation and lower voltage loss. It is predicted that the PCE can be further improved when the voltage loss across the CH3NH3PbI3 thin film is minimized.
    出版者: Elsevier Ltd
    出版日期: 2016-12-01
    出處: Solar energy, 2016-12, Vol.139, p.518-523
    版權: 2016 Elsevier Ltd
    識別號: ISSN: 0038-092X
    識別號: EISSN: 1471-1257
    識別號: DOI: 10.1016/j.solener.2016.10.025
    顯示於類別:[光電科學與工程學系] 期刊論文

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