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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/103737


    題名: Indium-free transparent TiOx/Ag/WO3 stacked composite electrode with improved moisture resistance
    作者: 李勝偉;Peng, Cheng-Hsiung;Chen, Pang Shiu;Lo, Jei Wen;Lin, Tzu Wei;Lee, S. W.
    貢獻者: 工學院材料科學與工程研究所
    關鍵詞: Characterization and Evaluation of Materials;Chemistry and Materials Science;Materials Science;Optical and Electronic Materials
    日期: 2016-11-01
    上傳時間: 2026-04-23 11:36:29 (UTC+8)
    出版者: Springer New York;New York: Springer US
    摘要: 摘要: Amorphous TiO x , WO 3 and Ag mid-layer films were deposited on polyethersulfone (PES) and soda-lime glass via electron beam evaporation at room temperature. The crystallinity, microstructure and surface morphology of asymmetric TiO x /Ag/WO 3 multilayers (TAW) and symmetric WO 3 /Ag/WO 3 (WAW) multilayers were investigated. The polygrains oriented along the (111) planes in the inserted Ag thin films were adopted to supply carriers into both of the dielectric layers and reduce the sheet resistance of the multilayer. The TAW multilayer with a sufficiently large Ag thickness (>15 nm) exhibited low resistance, and highly visible transmittance, low infra-red transmittance, to serve as a transparent conductive electrode and a good heat mirror. The dependence of the Ag and TiO x thickness on the optical and electrical properties of TAW multilayers was also explored. A figure of merit (FOM) was used to find an optimal layer structure for a TAW multilayer with superior conductivity and highly visible transparency. A high FOM of 1.2 × 10 −1 (Ω −1 ) was achieved at the visible wavelength of 550 nm for a asymmetric TAW stacked layer on PES with a 15-nm-thick Ag layer, a 40-nm-thick TiO x and a 40 nm-thick WO 3 layer. The moisture resistances of the TAW stacking layer showed more robustness than that of the WAW sample after damp heat exposure.
    其他題名: J Mater Sci: Mater Electron
    出版者: New York: Springer US
    出版日期: 2016-11-01
    出處: Journal of materials science. Materials in electronics, 2016-11, Vol.27 (11), p.12060-12066
    資源來源: EBSCOhost OmniFile Full Text Select
    版權: Springer Science+Business Media New York 2016
    識別號: ISSN: 0957-4522
    識別號: EISSN: 1573-482X
    識別號: DOI: 10.1007/s10854-016-5354-z
    顯示於類別:[材料科學與工程研究所 ] 期刊論文

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