摘要： Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi‐crystalline silicon (mc‐Si) solar cells has been investigated. The low‐temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O2–Ar system using indium nanocrystals as seed particles via the self‐catalyzed growth mechanism. The size‐dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short‐circuit current (from 35.39 to 38.33 mA cm−2) without deterioration of other performance parameters is observed for mc‐Si solar cells coated with InO NWs. 其他題名： Phys. Status Solidi A 出版者： Weinheim: Blackwell Publishing Ltd 出版日期： 2016-08 出處： Physica status solidi. A, Applications and materials science, 2016-08, Vol.213 (8), p.2259-2263 版權： 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 版權： 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 1862-6300 識別號： EISSN: 1862-6319 識別號： DOI: 10.1002/pssa.201600005
