摘要： The conduction channel of a graphene field‐effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self‐aligned gate‐terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold. 其他題名： Adv. Mater 出版者： Germany: Blackwell Publishing Ltd 出版日期： 2015-11-01 出處： Advanced materials (Weinheim), 2015-11, Vol.27 (41), p.6519-6525 資源來源： Wiley Online Library Journals 版權： 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 版權： 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 版權： licence_http://creativecommons.org/publicdomain/zero 識別號： ISSN: 0935-9648 識別號： ISSN: 1521-4095 識別號： EISSN: 1521-4095 識別號： DOI: 10.1002/adma.201502544 識別號： PMID: 26398725
