摘要： This letter describes the output power enhancement of the GaN-based flip-chip light-emitting diodes (FC LED) featuring conical structures fabricated by etching a self-assembled monolayer SiO2 spheres as the hard mask. By roughening the surface of FC LED components, it increases structural size of the components and elevates the light extraction efficiency of FC LED. At a constant current of 400 mA, the output power of the FC LED with 1200 nm conical structures is 638.1 mW and enhanced by 6.1% compared with the FC LED without surface roughening. 出版者： AIP Publishing LLC 出版日期： 2016-11 出處： AIP advances, 2016-11, Vol.6 (11), p.115013-115013-7 資源來源： DOAJ Directory of Open Access Journals 版權： Author(s) 識別號： ISSN: 2158-3226 識別號： EISSN: 2158-3226 識別號： DOI: 10.1063/1.4967508 識別號： CODEN: AAIDBI
