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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/105055


    題名: Wide-range work-function tuning of active graphene transparent electrodes via hole doping
    作者: 蘇清源;Syu, Jheng-Yuan;Chen, Yu-Min;Xu, Kai-Xiang;He, Shih-Ming;Hung, Wu-Ching;Chang, Chien-Liang;Su, Ching-Yuan
    貢獻者: 工學院能源工程研究所
    關鍵詞: copper;electrodes;graphene;transmittance;X-ray photoelectron spectroscopy
    日期: 2016-01-01
    上傳時間: 2026-04-23 12:05:40 (UTC+8)
    出版者: Royal Society of Chemistry
    摘要: 摘要: Graphene is regarded as a potential candidate to replace the transparent conductive (TC) electrodes that are currently used in various optoelectronic applications. However, there is still a lack of methods by which to achieve low sheet resistance ( R s ) with stable doping and work functions with a wide range of tunability, which is significant for band alignment at the interface to enhance charge transport and thus to achieve higher device performance. We developed a novel strategy for preparing a TC electrode by doping layer-by-layer (LBL)-stacked graphene with AuCl 3 , by which means an excellent TC performance (an R s of 40 ohm sq −1 at a transmittance ( T ) of 89.5%) and an extremely wide range of work-function tunability (∼1.5 eV) were successfully achieved. Moreover, a hybrid electrode prepared by transferring doped graphene onto a pre-patterned Cu metal mesh exhibited a low resistance of ∼4.9 ohm sq −1 . In addition, we monitored the long-term stability of AuCl 3 -doped graphene for 6 months and also constructed a model for accelerated degradation testing. The relevant mechanism of charge transfer between the graphene and the dopants was characterized based on X-ray photoelectron spectroscopy (XPS) spectra to elucidate degradation observed after long-term testing. This work contributes a novel type of “active electrode”; the doped graphene film not only serves as a high-performance TC electrode but also provides a wide range of tunable work functions. The proposed active electrode is prepared using a scalable and facile doping process, which paves the way for its usage in applications such as optoelectronic devices.
    出版日期: 2016-01-01
    出處: RSC advances, 2016-01, Vol.6 (39), p.32746-32756
    資源來源: Royal Society of Chemistry
    識別號: ISSN: 2046-2069
    識別號: EISSN: 2046-2069
    識別號: DOI: 10.1039/C6RA04449B
    顯示於類別:[能源工程研究所 ] 期刊論文

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