Institute of Electrical and Electronics Engineers Inc.;IEEE
摘要:
摘要： In this paper, we study the influence of p-type modulation doping on the dynamic/static performance of high-speed 850-nm VCSELs with highly strained multiple quantum wells. The studied device structure has a 3/2 λ asymmetric cavity design, which can let the internal transit time of injected carriers be as short as that of 1/2 λ cavity design and further improve its performance in terms of speed and output power for high single-mode operation. Our proposed VCSEL structure with p-type doping shows superior modulation speed with an output power comparable with that of the un-doped reference device under room temperature operation. Furthermore, when the operating temperature reaches 85 °C, there is a significant improvement in both the modulation speed and maximum power of the p-doped structures. According to our simulation, this can be attributed to the change in the quasi-Fermi levels of the injected carriers after the addition of p-doping in the active layers, which minimizes the electron leakage under high-temperature operation. 其他題名： JQE 出版者： IEEE 出版日期： 2016-11 出處： IEEE journal of quantum electronics, 2016-11, Vol.52 (11), p.1-7 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 0018-9197 識別號： EISSN: 1558-1713 識別號： DOI: 10.1109/JQE.2016.2611439 識別號： CODEN: IEJQA7
