摘要： The photovoltaic performance of a GaN p-n-n homojunction is characterized using the air-mass (AM) 1.5G solar spectrum and a 532-nm green laser. The n-type active region is doped with Si in order to create an intermediate band for sub-bandgap photon absorption. When the doping level in the active region increases from 0 (unintentionally doped) to n=1×1018cm−3, the short-circuit current density (Jsc) under illumination by the green laser is noticeably reduced, whereas the Jsc under AM1.5G is significantly enhanced by 90%. The results indicate that the Si-induced intermediate band is partially filled, a key feature favored by intermediate band solar cells. •GaN p-n-n homojunction solar cells are designed and fabricated to demonstrate the capability of sub-bandgap photon absorption.•The n-type active region is doped with Si in order to create an intermediate band.•Under the illumination of AM 1.5G, the short-circuit current density is significantly enhanced by 90% with increased Si-doping in the active region.•The partially filled intermediate band is confirmed with a two-photon absorption measurement. 出版者： Elsevier B.V 出版日期： 2015-01 出處： Solar energy materials and solar cells, 2015-01, Vol.132, p.544-548 資源來源： Elsevier ScienceDirect Journals Complete 版權： 2014 Elsevier B.V. 識別號： ISSN: 0927-0248 識別號： EISSN: 1879-3398 識別號： DOI: 10.1016/j.solmat.2014.10.008
