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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/108678


    題名: Double-sided transparent photoanode of ZnO nanowire arrays sensitized by CdS and CdSe in photoelectrochemical cells for solar hydrogen production
    作者: 林進榮;Lin, Chin-Jung;Lin, Shi-Ni;Lai, Jhih-Hong
    貢獻者: 工學院環境工程研究所
    關鍵詞: Arrays;Cadmium selenides;Cadmium sulfides;Conversion;Deposition;Efficiency;Indium tin oxide;Photoanode;Photoelectrochemical Cells;Quantum dots;ZNO NANOWIRE ARRAYS
    日期: 2016-11-01
    上傳時間: 2026-04-23 15:01:29 (UTC+8)
    出版者: American Scientific Publishers
    摘要: 摘要: A double-sided CdS and CdSe-sensitized ZnO nanowire (ZnR)/indium tin oxide (ITO) photoelectrode is fabricated using solution-based processes to improve the solar-to-hydrogen conversion efficiencies of photoelectrochemical (PEC) cells. Vertically aligned ZnR arrays were grown directly on both sides of the transparent ITO glass substrates by chemical bath deposition method and then coated with CdS and CdSe quantum dots (QDs) as the photosensitizer. This fabricated photoanode with double-sided QD sensitization enables the formation of the tandem structure as an effective heterojunction extending toward the visible spectrum and toward an effective separation of charge carriers. For PEC hydrogen generation under one-sun irradiation, the double-sided transparent photoanode of ZnR arrays with conformal QD deposition exhibited a conversion efficiency of 4.9%. Compared with that in the photoanode with layered QD aggregation, improvement in conversion efficiency was approximately 70%.
    其他題名: Nanosci Nanotechnol Lett
    出版者: American Scientific Publishers
    出版日期: 2016-11-01
    出處: Nanoscience and nanotechnology letters, 2016-11, Vol.8 (11), p.961-964
    識別號: ISSN: 1941-4900
    識別號: EISSN: 1941-4919
    識別號: DOI: 10.1166/nnl.2016.2181
    顯示於類別:[環境工程研究所 ] 期刊論文

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