摘要： In this study, the installation of insulation blocks in the hot zone is utilized to assist in the growth of multi-crystalline silicon ingots with 800kg of silicon charge using the seeded directional solidification method. A transient global numerical simulation is carried out to investigate the heat and mass transport during growth process. At a higher solidification fraction, lower concavity of the crystal–melt interface near the crucible wall can be obtained as compared to the standard model. The lowest concavity and highest energy saving is achieved when insulation blocks are added to the side of a directional solidification block and to the low part of the side insulation. The simulation results for this design also show a reduction of the melt velocity. The average oxygen concentration is slightly higher along the crystal–melt interface, compared to the standard one. •A directional solidification furnace is used to grow an 800kg silicon charge.•The addition of insulation blocks to the hot zone can effectively promote the preservation of the seed crystals.•The concavity of the crystal–melt interface becomes much lower with a higher solidification fraction.•Total heating power consumption may be reduced about 13%. 出版者： Elsevier B.V 出版日期： 2016-10-15 出處： Journal of Crystal Growth, 2016-10, Vol.452, p.27-34 版權： 2016 Elsevier B.V. 識別號： ISSN: 0022-0248 識別號： EISSN: 1873-5002 識別號： DOI: 10.1016/j.jcrysgro.2015.12.045
