Monolithic optical receiver fabricated by AlGaAs/InGaAs doped-channel heterostructures

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题名:	Monolithic optical receiver fabricated by AlGaAs/InGaAs doped-channel heterostructures
作者:	Chien,FT;Chan,YJ
贡献者:	電機工程研究所
日期:	1997
上传时间:	2010-06-29 20:21:28 (UTC+8)
出版者:	中央大學
摘要:	The integrated optoelectronic receivers, which consist of photoderectors and preamplifiers, are the key components for optical communication systems. In this study, we used the AlGaAs/InGaAs doped-channel heterostructure to fabricate and integrate both MSM-photodetectors(MSM-PDs) and a transimpedance amplifier. Heterostructure doped-channel FETs (DCFETs) have demonstrated a higher current density, a higher gate breakdown and rum-on voltage, and a better linearity, as compared to the MESFETs and HEMTs. These advantages provide an amplifier circuit to achieve a higher responsivity, and the most of all, a wider operation range and a better linearity. A responsivity of 1.92 KV/W was obtained in this configuration, while this value was 0.97 KV/W where the MESFET-type pre-amplifier was used.
關聯:	COMPOUND SEMICONDUCTORS 1996
显示于类别:	[電機工程研究所] 期刊論文

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