CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/29410

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29410

题名:	CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS
作者:	YANG,MT;CHAN,YJ;CHEN,CH;CHYI,JI;LIN,RM;SHIEH,JL
贡献者:	電機工程研究所
关键词:	HETEROSTRUCTURE
日期:	1994
上传时间:	2010-06-29 20:24:04 (UTC+8)
出版者:	中央大學
摘要:	The pseudomorphic properties of doped-channel field-effect transistors have been thoroughly investigated based on A]GaAs/InGa1-xAs (0 less-than-or-equal-to x less-than-or-equal-to 0.25) heterostructures with different In contents. Through various analytical schemes and device characterization, we observed that by introducing a 150 angstrom strained In0.15Ga0.85As channel we can enhance device performance; however, this strained channel is not stable after high-temperature heat treatment. By further increasing the In content up to x = 0.25, the device performance started to degrade, which is associated with strain relaxation in this highly strained channel.
關聯:	JOURNAL OF APPLIED PHYSICS
显示于类别:	[電機工程研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	604	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing