Collector doping design for improving DC and RF performance in InGaP/GaAs HBTs before onset of kirk effect

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Title:	Collector doping design for improving DC and RF performance in InGaP/GaAs HBTs before onset of kirk effect
Authors:	Wang,CM;Hsueh,KP;Hsin,YM
Contributors:	電機工程研究所
Date:	2005
Issue Date:	2010-07-06 18:23:00 (UTC+8)
Publisher:	中央大學
Abstract:	A thin high-doping layer was inserted in the uniform doped collector to extend the operational current before current gain and cut-off frequency roll-off. Two times higher collector current before onset of Kirk effect was obtained and the resulted John fi
Relation:	IEICE TRANSACTIONS ON ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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