MEXTRAM modeling of Si-SiGeHPTs

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32414

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32414

Title:	MEXTRAM modeling of Si-SiGeHPTs
Authors:	Yuan,F;Shi,JW;Pei,ZW;Liu,CW
Contributors:	電機工程研究所
Keywords:	HETEROJUNCTION PHOTOTRANSISTORS;BIPOLAR-TRANSISTORS
Date:	2004
Issue Date:	2010-07-06 18:27:00 (UTC+8)
Publisher:	中央大學
Abstract:	The integration of the photodetector is essential for optical communication chips. The heterojunction phototransistor (HPT) is integrable with the SiGe HBT process and can be modeled by a modified MEXTRAM model for the circuit simulation. The impact ioniz
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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