DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs

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Title:	DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs
Authors:	Tu,HY;Chou,TH;Lin,YS;Chiu,HC;Chen,PY;Wu,WC;Lu,SS
Contributors:	電機工程研究所
Keywords:	INGAP/INGAAS/GAAS
Date:	2003
Issue Date:	2010-07-06 18:28:55 (UTC+8)
Publisher:	中央大學
Abstract:	The dc and RF characteristics of Ga0.49In0.51 P-In0.15Ga0.85As enhancement-mode pseudomorphic HEMTs (pHEMTs) are reported for the first time. The transistor has a gate length of 0.8 mum and a gate width of 200 mum. It is found that the device can be opera
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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