Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low-power circuit applications

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Title:	Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low-power circuit applications
Authors:	Li,PW;Liao,WM;Shih,CC;Kuo,TS;Lai,LS;Tseng,YT;Tsai,MJ
Contributors:	電機工程研究所
Keywords:	LOW-FREQUENCY NOISE;PMOSFETS
Date:	2003
Issue Date:	2010-07-06 18:29:05 (UTC+8)
Publisher:	中央大學
Abstract:	We have investigated the effect of substrate biasing on the subthreshold characteristics and noise levels of Si/Si1-xGex (x = 0, 0.15, 0.3) heterostructure MOSFETs. A detailed, analysis of the dependence of threshold voltage, off-state current, and low-fr
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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