A new empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32517

Title:	A new empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs
Authors:	Lin,CK;Wang,WK;Chan,YJ
Contributors:	電機工程研究所
Date:	2002
Issue Date:	2010-07-06 18:30:30 (UTC+8)
Publisher:	中央大學
Abstract:	We propose a new large-signal model for AlGaAs/InGaAs pHEMTs, which can simulate the device microwave output power, non-linear characteristics at arbitrary bias points. This model includes a new drain current equation, which is extracted from its derivati
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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