Leaky-wave photodiodes with a partially p-doped absorption layer and a distributed Bragg reflector (DBR) for high-power and high-bandwidth-responsivity product performance

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题名:	Leaky-wave photodiodes with a partially p-doped absorption layer and a distributed Bragg reflector (DBR) for high-power and high-bandwidth-responsivity product performance
作者:	Chiu,WY;Shi,JW;Wang,WK;Wu,YS;Chan,YJ;Huang,YL;Xuan,R
贡献者:	電機工程研究所
关键词:	HIGH-SPEED;1.55-MU-M WAVELENGTH;COUPLED PHOTODIODES;GUIDE;PHOTODETECTORS
日期:	2006
上传时间:	2010-07-07 09:56:10 (UTC+8)
出版者:	中央大學
摘要:	In this letter, we describe a novel edge-coupled photodiode (PD) structure, which can greatly relax the dependence of the responsivity on the cleaved length of an evanescently coupled optical waveguide. The integration of a leaky optical waveguide with a
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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