GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35261

Title:	GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
Authors:	Kuo,C. H.;Chang,S. J.;Kuan,H.
Contributors:	光電科學與工程學系
Keywords:	FIELD-EFFECT TRANSISTOR;INGAN-GAN;PERFORMANCE;LEDS;BLUE;ITO
Date:	2007
Issue Date:	2010-07-07 14:08:19 (UTC+8)
Publisher:	中央大學
Abstract:	GaN-based indium-tin-oxide (ITO) light emitting diodes (LEDs) with p-GaN, n(+)-short period superlattice (SPS) and nanostructured silicon contact layers were fabricated. It was found that surface of the ITO LED with nanostructured silicon layer was very r
Relation:	IET OPTOELECTRONICS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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