Nitride-based near-ultraviolet mesh MQW light-emitting diodes

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35273

Title:	Nitride-based near-ultraviolet mesh MQW light-emitting diodes
Authors:	Kuo,C. H.;Feng,H. C.
Contributors:	光電科學與工程學系
Keywords:	ITO TRANSPARENT CONTACT;EXTRACTION EFFICIENCY;SAPPHIRE SUBSTRATE;GAN;SURFACE;LEDS
Date:	2007
Issue Date:	2010-07-07 14:08:44 (UTC+8)
Publisher:	中央大學
Abstract:	We have demonstrated nitride-based near-ultraviolet mesh multiquantum-well (MQW) light-emitting diodes (LEDs) toy etching through the MQW active region. With 20-mA injection current, it was found that forward voltages were 3.29, 3.31, and 3.38 V while out
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	398	View/Open

社群 sharing