Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35734

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35734

Title:	Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
Authors:	Kuo,CH;Chang,SJ;Su,YK;Wu,LW;Chen,JF;Shen,JK;Tsai,JM
Contributors:	光電科學研究中心
关键词:	METAL ULTRAVIOLET PHOTODETECTORS;LOW-OPERATION VOLTAGE;ALXGA1-XN/GAN SUPERLATTICES;ACCEPTOR ACTIVATION;GAN;BLUE
日期:	2003
上传时间:	2010-07-07 15:50:15 (UTC+8)
出版者:	中央大學
摘要:	The electrical properties of Si-doped n(+)-In0.23Ga0.77N/GaN SPS structure were investigated, and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement; showed that such a SPS structure exhibits a high sheet electron c
關聯:	IEEE TRANSACTIONS ON ELECTRON DEVICES
显示于类别:	[Optical Sciences Center] journal & Dissertation

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