Room temperature 1.3 and 1.5 mu m electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38616

Title:	Room temperature 1.3 and 1.5 mu m electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers
Authors:	Pei,Z;Chen,PS;Lee,SW;Lai,LS;Lu,SC;Tsai,MJ;Chang,WH;Chen,WY;Chou,AT;Hsu,TM
Contributors:	物理研究所
Keywords:	RADIATIVE RECOMBINATION;PHOTOLUMINESCENCE;GE
Date:	2004
Issue Date:	2010-07-08 13:32:59 (UTC+8)
Publisher:	中央大學
Abstract:	Electroluminescence devices that use Si/Ge multilayer quantum dots as emission material emitting at 1.3 and 1.5 mum are reported in this paper. The Si/Ge quantum dots were made by commercial ultra-high vacuum chemical vapor deposition techniques at 600 de
Relation:	APPLIED SURFACE SCIENCE
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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