Localized states in InxGa1-xN epitaxial film

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题名:	Localized states in InxGa1-xN epitaxial film
作者:	Chang,HS;Hsu,TM;Chuang,TF;Chen,WY;Gwo,S;Shen,CH
贡献者:	物理研究所
关键词:	LIGHT-EMITTING-DIODES;INGAN QUANTUM DOTS;PHOTOLUMINESCENCE;TEMPERATURE;EMISSION;DYNAMICS;SHIFT;WELL
日期:	2009
上传时间:	2010-07-08 14:00:04 (UTC+8)
出版者:	中央大學
摘要:	This study investigated localized states from In0.36Ga0.64N epitaxial film grown on a Si (111) substrate by performing macro-photoluminescence, micro-photoluminescence and time-resolved micro-photoluminescence experiments. Experimental data revealed two localized states - single and extended. The single localized state is a single-quantum-dot-like deep confined energy state, which is responsible for the bright line emissions. The extended localized state is a shallow confined energy state, which is related to a broad background emission. This work suggests that the origin of single and extended localized states is the indium-rich InxGa1-xN cluster and the spatial indium concentration fluctuation, respectively. (C) 2008 Elsevier Ltd. All rights reserved.
關聯:	SOLID STATE COMMUNICATIONS
显示于类别:	[物理研究所] 期刊論文

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