A study of the Franz-Keldysh oscillations in electromodulation reflectance of Si-delta-doped GaAs by a fast Fourier transformation

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题名:	A study of the Franz-Keldysh oscillations in electromodulation reflectance of Si-delta-doped GaAs by a fast Fourier transformation
作者:	Chang,WH;Hsu,TM;Lee,WC;Chuang,RS
贡献者:	物理研究所
关键词:	ELECTRIC-FIELD;PHOTOREFLECTANCE;SPECTROSCOPY;REGION
日期:	1998
上传时间:	2010-07-08 14:03:30 (UTC+8)
出版者:	中央大學
摘要:	The line shapes of electromodulation spectra exhibit extended Franz-Keldysh oscillations and interference beats in the presence of a uniform built-in electric field. For this work, we used photoreflectance and contactless electroreflectance to study the Franz-Keldysh oscillations in Si-delta-doped GaAs. The fast Fourier transformation taken to the photoreflectance and contactless electroreflectance spectra, produced more complicated results than were observed in previous studies, when the effect of the modulation field is nonnegligible. This indicates that the interference beats are not only due to different effective heavy-hole and light-hole mass but also to the modulation field. We propose that the Franz-Keldysh oscillations generally contain four frequencies, which correspond to the heavy-hole and Light-hole splitting. A comparison between the experiments and some numerical simulations attest to the validity of our proposal. This line shape analysis could then be applied to estimate the strength of a modulation field in contactless electroreflectance and photoreflectance. (C) 1998 American Institute of Physics.
關聯:	JOURNAL OF APPLIED PHYSICS
显示于类别:	[物理研究所] 期刊論文

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