Pumping-beam-induced photovoltaic effect on the photoreflectance of a delta-doped GaAs film

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39190

Title:	Pumping-beam-induced photovoltaic effect on the photoreflectance of a delta-doped GaAs film
Authors:	Wang,DP;Chen,CC;Shen,TL;Hsu,TM;Lee,WC
Contributors:	物理研究所
Keywords:	FRANZ-KELDYSH OSCILLATIONS;ELECTRIC-FIELD;DEPLETION REGION;SPECTROSCOPY
Date:	1996
Issue Date:	2010-07-08 14:07:45 (UTC+8)
Publisher:	中央大學
Abstract:	The photoreflectance (PR) spectroscopy of a delta-doped GaAs film has been measured at 300 K. Results reveal many Franz-Keldysh oscillations (FKOs) above the band-gap energy, which will enable the electric-field strength to be determined from the periods of FKOs. Since the photovoltaic effect cannot be neglected in PR measurements when using light as both the pumping and probing beams, it is generally assumed that the modulation field delta F is much smaller than the built-in field F so that the periods of the FKOs will not be affected by the pumping beam, However, the induced photovoltage can be over 2/3 of Fermi level at low temperatures and cannot be neglected even at room temperature. Hence, the finite value of delta F needs to be taken into consideration. The effect of delta F on the shapes of PR is discussed, and it is shown that the FKOs of PR oscillate at a frequency corresponding to F-delta F/2. (C) 1996 American Institute of Physics.
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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