EXCITONS AND INTERBAND-TRANSITIONS IN III-V SEMICONDUCTOR SUPERLATTICES

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39381

Title:	EXCITONS AND INTERBAND-TRANSITIONS IN III-V SEMICONDUCTOR SUPERLATTICES
Authors:	YOUNG,PM;HUI,PM;EHRENREICH,H
Contributors:	物理研究所
Keywords:	QUANTUM-WELL STRUCTURES;OPTICAL-PROPERTIES;EFFECTIVE MASSES;GAAS-GA1-XALXAS;ABSORPTION;ENERGY
Date:	1991
Issue Date:	2010-07-08 14:14:04 (UTC+8)
Publisher:	中央大學
Abstract:	The fundamental optical absorption of In1-xGaxAs/In1-yAlyAs and GaAs/Ga1-xAlxAs superlattices is calculated quantitatively using superlattice K.p theory. Electron-hole,Coulomb interactions yielding excitons and interband-transition Sommerfeld enhancement are incorporated. These fast, nonvariational calculations yield optical structure within 2-3 meV and absolute absorption coefficients within 10% of experimental results for all but one of the twelve samples analyzed. Constituent bulk parameters and band offsets constitute the only input. Computer requirements are very modest. Calculations for different band offsets and other interface parameters using this versatile approach permit estimates of physically important quantities of relatively unexplored heterostructure systems, for example, II-VI superlattices.
Relation:	PHYSICAL REVIEW B
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	412	View/Open

社群 sharing