Fabrication and enhanced field emission properties of novel silicon nanostructures

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/49857

Title:	Fabrication and enhanced field emission properties of novel silicon nanostructures
Authors:	Ravipati,S;Kuo,CJ;Shieh,J;Chou,CT;Ko,FH
Contributors:	化學工程與材料工程學系
Keywords:	ELECTRON-EMISSION;NANOWIRES;PILLARS;ARRAYS;FILMS
Date:	2010
Issue Date:	2012-03-27 16:24:49 (UTC+8)
Publisher:	國立中央大學
Abstract:	We reported the fabrication and the field emission properties of two-tier novel silicon nanostructures. First, silicon nanopillars with ordered high aspect ratio were achieved by using conventional lithographic techniques to act as the field emission sources. Second, sharp-edged well-aligned silicon nanograss was fabricated on top of the nanopillars by means of hydrogen plasma dry etching to induce the field emission characteristics. The turn-on fields were obtained as 10.5 and 14.4 V/mu m under current density of 0.01 mA/cm(2) for two-tier patterns separated by respective 5 mu m and 2 mu m spaces. The excellent field emission property from these novel nanostructures exhibited a great potential as high-performance field emitter arrays towards future nanoelectronic devices. (C) 2010 Elsevier Ltd. All rights reserved.
Relation:	MICROELECTRONICS RELIABILITY
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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