三維圓弧接面PN二極體之特性公式推導與模擬;3D PN Diode Equation and Device Simulation with spherical Junction

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/54506

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/54506

Title:	三維圓弧接面PN二極體之特性公式推導與模擬;3D PN Diode Equation and Device Simulation with spherical Junction
Authors:	枋泓志;Fang,Hong-Chih
Contributors:	電機工程研究所
Keywords:	二極體公式推導;圓球接面;三維PN接面;three-dimensional pn junction;spherical junction;diode equation deriving
Date:	2012-07-09
Issue Date:	2012-09-11 18:52:08 (UTC+8)
Publisher:	國立中央大學
Abstract:	在本篇論文中，我們將推導三維圓球pn接面的電位、電場、空乏區寬度等的公式，比起一維的公式，三維圓球的公式變得很複雜，然而，經過簡單的計算，仍可得到球接面的空乏區寬度，我們也比較公式的結果與三維的數值模擬的結果。利用這些球接面的公式，我們可以更快速地觀察到空乏區寬度、最大電場、崩潰電壓等對球接面半徑的變化。同理，空乏區寬度、最大電場、崩潰電壓等對球接面參雜濃度的變化也可快速得到。In this thesis, we try to derive the analytical equations of the potential, the electric field, and the depletion width in a three-dimensional spherical pn junction. The analytical equations for spherical pn junction is more complex than that for 1D pn junction. However, the depletion width can be obtained by a simple calculation. We compare the analytical results with the results from 3D numerical simulation. With these analytical equations, we can quickly investigate the dependence of the depletion width, the maximum electric field, and the breakdown voltage on the radius of a spherical pn junction. Similarly, the dependence of the depletion width, the maximum electric field, and the breakdown voltage on the doping of a spherical pn junction can be obtained quickly.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	584	View/Open

社群 sharing

Loading...