電遷移誘發銅基材於純錫銲料及錫銀銲料中消耗探討

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题名:	電遷移誘發銅基材於純錫銲料及錫銀銲料中消耗探討
作者:	陳佳鈺;Chen,Chia-yu
贡献者:	化學工程與材料工程學系
关键词:	電遷移現象;基材溶解現象;覆晶封裝;銅墊層消耗;純錫銲料;錫銀銲料
日期:	2013-06-18
上传时间:	2013-07-10 11:51:10 (UTC+8)
出版者:	國立中央大學
摘要:	在本實驗中，使用(1)Cu/Sn3.5wt%Ag/Cu以及(2)Cu/Sn/Cu兩種覆晶結構，實驗溫度於50℃~150℃，通以電流密度為10000 A/cm2的電流從0小時到200小時觀察電遷移效應誘發銅基材消耗情形。於(1)Cu/Sn3.5wt%Ag/Cu結構中，其銅基板消耗小於(2)Cu/Sn/Cu結構。為了更近一步知道銅在兩種銲料的消耗情形，以及介面反應現象，我們將銅線和銲料塊材施以機械力後接合，在實驗溫度150℃及200℃下進行固態反應，時間為0小時到500小時，以了解銅及銲料在固態下之消耗行為，銅在Sn3.5wt%Ag銲料塊接合之消耗量大於在銅在Sn銲料塊接合中之消耗，而與電遷移實驗之結果為銅在(2)Cu/Sn/Cu之消耗量大於在(1)Cu/Sn3.5wt%Ag /Cu中之消耗，此兩結果相反。此外，針對Sn3.5Ag銲料在電遷移實驗以及銅線對銲料塊材接合實驗消耗結果比較，銅消耗量在銅線和銲料塊材接合實驗大於電遷移實驗。在電遷移下銅消耗量速率反而下降，而我們推測在銲料中添加微量銀會產生抑制銅消耗的機制。 In this study, two flip-chip joint structures, (1)Cu/Sn3.5wt%Ag/Cu and (2)Cu/Sn/Cu were stressed with a high current density of 104 A/cm2 at 50~ 150℃for 0~200 hours. Electromigration induced Cu consumption was observed in the cathode Cu bond-pads of both current-stressed Cu/Sn/Cu and Cu/Sn3.5Ag/Cu flip-chip joint structures. Besides, EM-induced Cu consumption in the (1)Cu/Sn3.5wt%Ag/Cu flip-chip joint is smaller than that of (2)Cu/Sn/Cu structure. For further knowing the Cu consumption and the surface reaction between Cu and two solders, Cu wire was sandwiched in the solder plates at 150 ℃ and 200 ℃ for 0 ~500 hr. The result of the Cu consumption between Cu wire and Sn3.5Ag solder is relatively larger than that of the Cu wire and Sn solder case. The above results are opposite to the result of electromigration induced Cu consumption in the (2)Cu/Sn/Cu structure flip-chip joint, which is larger than that of the Cu/Sn3.5Ag/Cu flip-chip joint. According to decreasing of the Cu consumption rate under EM, we suspect adding minor Ag in solder would bring rise to the mechanism to inhibit Cu consumption.
显示于类别:	[化學工程與材料工程研究所] 博碩士論文

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