高介電常數TiOX/SiOX介電層製備低電壓場效應 電晶體元件;Low Voltage Field Effect Transistor Based on High Dielectric Constant Titanium Oxide/ Silicon Oxide Dielectric

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Title:	高介電常數TiOX/SiOX介電層製備低電壓場效應電晶體元件;Low Voltage Field Effect Transistor Based on High Dielectric Constant Titanium Oxide/ Silicon Oxide Dielectric
Authors:	楊柏宣;Yang,Bo-Xuan
Contributors:	化學工程與材料工程學系
Keywords:	高介電常數材料;有機場效應電晶體;溶液凝膠法;High-K material;OFET;Sol-gel
Date:	2015-07-29
Issue Date:	2015-09-23 10:50:56 (UTC+8)
Publisher:	國立中央大學
Abstract:	在本實驗中，十八烷基磷酸(octadecylphosphonic acid; ODPA)覆蓋高介電常數TiOX/SiOX和有機混成(hTSO)之介電層製備有機pentacene場效應電晶體。沉積自組裝單分子層後，厚度約為120 nm的hTSO介電層，並擁有145 nF cm-2的電容值、高介電常數(~20)及低漏電流(10-7 A cm-2)。本實驗將hTSO/ODPA混成介電層沉積pentacene製備有機場效應電晶體，其操作電壓低於-3.0 V，電流開關比超過104，閥值電壓小於-0.54 V，亞閥值斜率小於300 mv dec-1，遷移率達0.2 cm2 V-1 s-1。而在最後對其進行穩定性測試，hTSO介電層經過ODPA沉積後的電晶體具有良好的穩定性。在本實驗中，以全溶液製程製備全透明之低電壓氧化鋅(ZnO)場效應電晶體。控制錫的摻雜濃度及退火溫度製備高導電度透明ITO並作為閘極。為了製備低成本之電子元件，溶液製程之ZnO薄膜被用來當作場效應電晶體之主動層。新退火溫度條件400 oC之hTSO 介電常數高達34。製備出以旋轉塗佈ITO閘極及具有高電容值旋轉塗佈hTSO介電層，並最後以噴塗法製備PEDOT:PSS作為源極及汲極製備全溶液製程且透明之ZnO場效應電晶體。結果顯示出有潛力作為高性能之全溶液製程且透明之ZnO場效應電晶體。 ;We reported on the fabrication of low-voltage operating pentacene-based organic thin film transistors (OTFTs), composted of a high k gate dielectric made from titanium-silicon oxide/organic hybrid materials(hTSO) covered with a long alkyl chain octadecylphosphonic acid(ODPA). 120 nm-thick hTSO hybrid dielectric provides high capacitance (145 nF cm-2), high k value (~20) and low leakage current density (10-7 A cm-2). Employing the appropriate hTSO/ODPA hybrid dielectric, pentacene based OTFTs operate under -3.0 V, on/off ratio above 104, threshold voltage below -0.54 V, subthreshold slopes as low as 300 mv dec-1, and mobilities as 0.2 cm2 V-1 s-1. We reported low-voltage all solution-processable transparent ZnO-FETs. Controlling the Sn doping concentration and the annealing method/atmosphere enabled highly conductive transparent gate electrodes. Solution-processed ZnO thin films are attractive as active materials in field effect transistors (FETs) for low-cost electronic device applications. The electrical characteristics of 400 oC hTSO show a high dielectric constant of nearly 34. For the first time, all solution-processed fully transparent ZnO-FETs based on spin-coated ITO gate electrodes, hTSO gate dielectric layers with high capacitance and spray-coating PEDOT:PSS pattern electrodes were demonstrated. Our results suggest that solution-processable fully transparent oxide FETs have the potential for low-temperature and high-performance application in transparent.
Appears in Collections:	[National Central University Department of Chemical & Materials Engineering] Electronic Thesis & Dissertation

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