適用於毫米波功率放大器之高功率氮化鋁銦/氮化鎵高電子遷移率電晶體開發;Development of High Power Alinn/Gan High Electron Mobility Transistors for Millimeter Wave Power Amplifiers

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > Research Project > Item 987654321/70866

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/70866

Title:	適用於毫米波功率放大器之高功率氮化鋁銦/氮化鎵高電子遷移率電晶體開發;Development of High Power Alinn/Gan High Electron Mobility Transistors for Millimeter Wave Power Amplifiers
Authors:	綦振瀛;邱顯欽
Contributors:	電機工程學系
Keywords:	電子電機工程
Date:	2016-08-31
Issue Date:	2016-10-11 19:22:59 (UTC+8)
Publisher:	科技部
Abstract:	研究期間：10508 ~ 10607
Relation:	財團法人國家實驗研究院科技政策研究與資訊中心
Appears in Collections:	[Department of Electrical Engineering] Research Project

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