本論文以微型化之雙頻切換式波束成形模組為設計目標，首先，提出操作於 2.45/5.8 GHz之微型化雙頻4 × 4巴特勒矩陣，設計上使用雙頻橋式T線圈取代傳輸線以同時達到微型化與雙頻化的效果，並實現於積體被動元件製程中，其晶片面積僅為5.96 mm × 6.60 mm，在5.8 GHz之電氣尺寸則為0.12λ0 × 0.13λ0。 其次，使用串並聯結構設計一2.45/5.8 GHz雙頻吸收式單刀雙擲開關，設計上亦使用雙頻橋式T線圈取代傳輸線以同時達到微型化與雙頻化的效果，並實現於砷化鎵製程中，其晶片面積為1.5 mm × 2.0 mm，在5.8 GHz之電氣尺寸為0.029λ0 × 0.039λ0。 最後，將前述之微型化雙頻巴特勒矩陣與雙頻吸收式開關整合，實現微形化之2.45/5.8 GHz雙頻切換式波束成形模組。整體電路面積為9.3 mm × 17.7 mm，在5.8 GHz之電氣尺寸為0.18λ0 × 0.34λ0，可用以控制4 × 1天線陣列，於2.45/5.8 GHz內達成切換四種波束指向的效果。 ;In this study, miniaturized dual-band switched beamforming module is proposed. First, a miniaturized 2.45/5.8 GHz 4 × 4 Butler matrix is presented, which is achieved by using dual-band bridged-T coils to replace the λ/4 lines for circuit area reduction and dual-band operation. The proposed dual-band Butler matrix is implemented in the integrated passive device process, and the chip size is only 5.96 mm × 6.60 mm, which corresponds to an electrical size of 0.12λ0 × 0.13λ0 at 5.8 GHz. Secondly, a 2.45/5.8 GHz absorptive SPDT switch is presented, which also employs dual-band bridged-T coils for circuit area reduction and dual-band operation. It is implemented in the GaAs pHEMT process, and the chip size is 1.5 mm × 2.0 mm, while the electrical size is 0.029λ0 × 0.039λ0 at 5.8 GHz. Finally, a miniaturized 2.45/5.8 GHz switched beamforming module is implemented, through the integration of proposed miniaturized dual-band Butler matrix and dual-band absorptive SPDT switch. The circuit size is 9.3 mm × 17.7 mm, while the electrical size is 0.18λ0 × 0.34λ0 at 5.8 GHz. It can be used to control a 4 × 1 linear antenna array to achieve four different main beam directions.
