本研究以兩步驟金屬輔助無電鍍化學蝕刻法，成功地於Ptype(001)、N type(001)晶面之矽單晶基材上製備高深寬比、大面積準直矽晶奈米線陣列，再由丙酮、氧氣驗證趨勢變化與機制。除此之外，更進一步以橫向蝕刻製備多孔隙矽晶奈米線陣列，此多孔隙奈米結構展現更優異之比表面積，由氣體感測結果證明其大幅提升對丙酮感測之性能，再將最佳條件矽晶多孔隙奈米線陣列以無電鍍銀均勻披覆多孔隙奈米線上。銀/多孔隙矽晶奈米線陣列蕭特基氣體感測器在額定電壓下量測氣體響應、靈敏度、響應時間及恢復時間。最後，將具有最佳製程條件直接與超薄可撓曲矽單晶基材整合。 本研究以一步驟金屬輔助均勻化學蝕刻法成功製備超薄可撓曲矽單晶基材，再透過其上製程條件製備可撓曲銀/多孔隙矽晶奈米線陣列，展現十分優異之彎曲能力，可分別於 2.5cm、 1.6cm 曲率半徑下進行氣體感測，測試彎曲前後是否因比表面積增加，而更加提升對丙酮之響應。 最後，針對多孔隙所造成恢復時間增加提出改善方式，正面以奈米線為基礎上，背面以孔洞為基礎，製備出可撓曲銀/多孔隙矽晶奈米線/矽晶孔洞異質結構陣列，使得氣體有另一個途徑進行脫附，藉此縮短恢復時間，達到元件性能之優化。;In this study, the high aspect ratio, large-area, vertically-aligned single crystalline silicon nanowire arrays (SiNWs) on P type (001) and N type (001) silicon substrate is successfully fabricated by the two-step metal-catalyzed electroless etching approach. It is proved the variation trend and mechanism by the acetone and oxygen. In addition, the single crystalline porous silicon nanowire arrays is further fabricated by the lateral etching, the porous nanostructure exhibited excellent specific surface area, from the result of gas sensing, it substantially enhance performance for acetone, and then we use the best one is uniformly decorated Ag on the porous SiNWs by the electroless Ag deposition. The produced porous Ag/SiNWs Schottky junction gas sensor is able to operate at any voltage and exhibit response, sensitivity, response time and recovery time. The flexible porous Ag/SiNWs Schottky junction gas sensor is demonstrated by combining with ultra-thin Si substrate which has excellent bending ability, and it can be applied to achieve gas sensing on 2.5 cm and 1.6 cm curvature surface. The resulting response enhancement can be attributed to specific surface area enhancement after bending. In the last, we proposed improvement for the increase of recovery time caused by porosity. The front side is based on nanowires and the back side is based on holes. There is another way to desorb. Therefore, we look forward to shortening the recovery time and optimizing the performance of the device.
