提高開路電壓與填充因子的錫鉛鈣鈦礦太陽能電池製備與優化研究;Improving Open-Circuit Voltage and Fill Factor through the Fabrication and Optimization of Tin-Lead Perovskite Solar Cells

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Title:	提高開路電壓與填充因子的錫鉛鈣鈦礦太陽能電池製備與優化研究;Improving Open-Circuit Voltage and Fill Factor through the Fabrication and Optimization of Tin-Lead Perovskite Solar Cells
Authors:	林宜璇;Lin, Yi-Xuan
Contributors:	化學工程與材料工程學系
Keywords:	錫鉛鈣鈦礦太陽能電池;界面缺陷鈍化;苯乙基碘化胺;2‑噻吩乙基氯化銨;類二維添加劑;Tin-Lead Perovskite Solar Cell;Interfacial Defect Passivation;Phenylethylammonium Iodide (PEAI);2-Thiopheneethylammonium Chloride (TEACl);Quasi-2D Additive
Date:	2025-01-21
Issue Date:	2025-04-09 16:03:51 (UTC+8)
Publisher:	國立中央大學
Abstract:	錫鉛鈣鈦礦提供了更理想的能隙調節能力，以實現更高的性能。本研究分成三個部分進行探討，首先藉由優化鈣鈦礦旋塗參數，隨著厚度增加，期望吸收更多光子以產生更多電流。當鈣鈦礦吸光層的厚度達到734 nm時，光電轉換效率（PCE）達到20.82%。了解鈣鈦礦吸光層厚度增加對電池光伏性能的影響後，還需要解決由於內部缺陷和界面缺陷引起的非輻射復合限制問題，這些缺陷會顯著降低電池的光伏性能和穩定性。為了進一步提高性能，我們系統性地研究了不同添加劑的使用，包括2-噻吩乙基氯化銨（Tetraethylammonium Chloride；TEACl）以及碘化苯乙胺（Phenethylammonium Iodide；PEAI），探討它們在不同濃度和鈍化位置上的效果。研究表明，0.50 mg/mL濃度的TEACl在鈣鈦礦層與電子傳輸層界面處的缺陷鈍化效果最佳。通過光致發光（PL）和空間電荷限制電流（SCLC）測試，確認了TEACl在降低非輻射復合、提升載子壽命及遷移率方面有顯著作用。此外，這種優化處理使光電轉換效率從無缺陷鈍化的18.28 %顯著提升至20.28 %。此外，類二維結構(PEAI+GASCN)的引入進一步改善了薄膜內部缺陷，通過層狀結構降低晶界缺陷，並抑制非輻射復合，結合GASCN的缺陷修復作用，成功實現了光電轉換效率達到21.60%，成功提高了開路電壓(Voc)和填充因子(FF)。然而穩定性結果顯示，類二維結構在高溫及光照條件下仍需進一步優化。未來需針對其層狀結構及界面穩定性展開深入研究，以實現高效率且高穩定性的鈣鈦礦光伏元件。;Tin-lead-based perovskites offer an ideal bandgap tuning capability to achieve higher performance. This study is divided into three parts. First, by optimizing the spin-coating parameters of the perovskite layer, the goal is to increase the thickness to absorb more photons and generate more current. When the thickness of the perovskite absorber layer reached 734 nm, the power conversion efficiency(PCE)achieved 20.82%. After understanding the impact of increasing perovskite layer thickness on the photovoltaic performance of the cell, it is essential to address the limitations caused by non-radiative recombination due to internal and interfacial defects, which significantly reduce the photovoltaic performance and stability of the device. To further improve performance, we systematically investigated the use of different additives, including 2-thiopheneethylammonium chloride (TEACl) and phenylethylammonium iodide (PEAI), to explore their effects at different concentrations and passivation positions. The study revealed that a concentration of 0.50 mg/mL TEACl provided the best defect passivation at the interface between the perovskite layer and the electron transport layer. Through photoluminescence (PL) and space-charge-limited current (SCLC) measurements, TEACl was confirmed to significantly reduce non-radiative recombination and enhance carrier lifetime and mobility. This optimized treatment resulted in a significant improvement in PCE from 18.28% (without defect passivation) to 20.28%. Furthermore, incorporating quasi-2D structures through the use of PEAI and GASCN further reduced internal defects in the perovskite film, lowered grain boundary defects via layered structures, and suppressed non-radiative recombination. Combined with GASCN’s defect repair effects, a PCE of 21.60% was achieved, along with improved open-circuit voltage (Voc) and fill factor (FF). However, stability results indicate that the quasi-2D structure still requires further optimization under high-temperature and light-illumination conditions. Future research should focus on enhancing the stability of its layered structure and interfaces to achieve highly efficient and stable perovskite photovoltaic devices.
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