| 摘要: | 鐵電電晶體（FeFET）因其出色的極化切換性能、低功耗和高密度儲存潛力，成為奈米電子元件和非揮發性記憶體的熱門研究對象。本文探討了不同材料與工藝處理對鐵電電晶體性能的影響，尤其關注鐵電材料HfZrO₂（HZO）在不同堆疊結構及熱處理過程中的行為。研究顯示，採用超晶格堆疊結構的HZO（SL-HZO）相比傳統的固溶體HZO（SS-HZO）展現了更好的鐵電特性及耐久性。這是因為SL-HZO結構中HfO₂與ZrO₂之間的界面強化了鍵結不均衡性，促進了正交相的形成，進而改善了極化性能。 此外，研究還探討了電極材料及氫電漿處理對FeFET性能的影響。以Mo作為頂部金屬閘極，並引入2.5nm厚的TiN作為擴散阻障層，顯著降低了界面缺陷，並改善了元件的耐久性與操作速度。氫電漿處理進一步減少了介面缺陷，提升了元件的可靠性和記憶視窗。特別是在進行了氫電漿處理的元件中，展示出最快的極化切換速度和最佳的介面缺陷改善效果。透過ID-VG、Quasi-Static Split C-V、Dit量測及材料分析的研究，進一步驗證了不同結構與處理方法對FeFET元件性能的影響。結果顯示，加入TiN阻擋層及氫電漿處理後，界面陷阱密度大幅下降，元件耐久度與操作速度明顯提升，在高溫與長時間操作下表現出卓越的穩定性及低變異性且具瞬時讀取功能。實驗結果表明，結合超晶格堆疊HZO、低膨脹係數電極材料及氫電漿處理，可以顯著提升鐵電電晶體的性能，為未來高效能的非揮發性記憶體及電子元件應用提供了關鍵的技術支持。;Ferroelectric Field-Effect Transistors (FeFETs) have become a popular research topic due to their excellent polarization switching performance, low power consumption, and high-density storage potential, making them ideal candidates for nanoelectronic components and non-volatile memory. This paper investigates the impact of different materials and processes on the performance of FeFETs, with a particular focus on the behavior of the ferroelectric material HfZrO₂ (HZO) under various stacking structures and heat treatments. The study reveals that the superlattice HZO (SL-HZO) structure exhibits superior ferroelectric properties and durability compared to the traditional solid solution HZO (SS-HZO). This is attributed to the enhanced bonding asymmetry at the interface between HfO₂ and ZrO₂ in the SL-HZO, which promotes the formation of an orthorhombic phase, improving polarization performance. Moreover, the study explores the effects of electrode materials and hydrogen plasma treatment on FeFET performance. The use of Mo as a top metal gate, along with the incorporation of a 2.5nm thick TiN diffusion barrier layer, significantly reduces interface defects and improves the device′s durability and operating speed. Hydrogen plasma treatment further reduces interface defects, enhancing device reliability and memory window. Notably, the FeFETs that underwent hydrogen plasma treatment exhibited the fastest polarization switching speed and the best interface defect improvement. Through ID-VG, Quasi-Static Split C-V, Dit measurements, and material analysis, the study confirms the influence of different structures and treatments on FeFET performance. The results show that adding a TiN barrier layer and hydrogen plasma treatment dramatically reduced interface trap density, improved device durability and speed, and demonstrated excellent stability and low variability under high-temperature and long-term operations, as well as fast readout functionality. The findings suggest that combining SL-HZO, low expansion coefficient electrode materials, and hydrogen plasma treatment can significantly enhance the performance of FeFETs, providing essential technological support for future high-performance non-volatile memory and electronic device applications. |
