| 摘要: | 本研究重點觀察使用 13.56 MHz RF 電源的 PVD 電漿系統中電弧管理氮化鋁 (AlN) 薄膜的品質。研究了反射係數（Г）、抑制時間和重燃時間等關鍵參數，旨在減少電弧擾動、提高薄膜結晶度和改善表面形貌。結果表明，雖然反射係數Г=0.2會導致頻繁抑弧，但電弧能量抑制得更早、更快，但膜層更薄。相反，較高的反射係數（Г=0.8）產生更多的能量，但無法發生開關抑制，因為抑制機制難以觸發，導致薄膜較厚。
此外，研究也比較了不同的抑制和重燃時間，包括2μs/2μs、100μs/50μs和1ms/500μs。結果表明，在1ms/500μs條件下，雖然電弧數量較少，但膜層品質較差，顯示抑制時間過長會影響電漿穩定性。 2μs/2μs短時間內的快速抑制有助於確保電漿製程的穩定性。結合反射係數閾值的調整，我們可以確認，雖然整體AlN薄膜的品質沒有顯著差異，但超快滅弧策略確實可以透過減少電弧擾動來有效提高薄膜品質。在我們的AlN沉積過程中，沒有觀察到明顯的電弧放電，所有電弧事件都是微米電弧，顯示這些微電弧對薄膜品質的影響是有限的。由於實驗過程中對射頻產生器的即時監控，電弧得到了有效處理，沒有出現硬電弧，進一步確保了薄膜的品質和製程的穩定性。此外，透過微調反射係數和抑制時間等參數，本研究提出了一種維持穩定電漿條件的最佳化方法，有助於提高射頻濺射過程中AlN薄膜的品質和均勻性。這些發現為 PVD中電弧的有效管理提供了重要見解，並為進一步優化薄膜沉積技術提供了途徑。
;This study focuses on observing the quality of arc-managed aluminum nitride (AlN) films in a PVD plasma system using a 13.56 MHz RF power supply. Key parameters such as reflection coefficient (Г), suppression time and re-ignition time were studied with the aim of reducing arc disturbance, increasing film crystallinity and improving surface morphology. The results show that although the reflection coefficient Г=0.2 will lead to frequent arc suppression, the arc energy is suppressed earlier and faster, but the film layer is thinner. In contrast, a higher reflection coefficient (Г=0.8) produces more energy, but switching suppression cannot occur because the suppression mechanism is difficult to trigger, resulting in a thicker film.
In addition, the study also compared different suppression and re-ignition times, including 2μs/2μs, 100μs/50μs and 1ms/500μs. The results show that under the condition of 1ms/500μs, although the number of arcs is small, the film quality is poor, indicating that too long suppression time will affect plasma stability. The rapid suppression within a short period of 2μs/2μs helps ensure the stability of the plasma process. Combined with the adjustment of the reflection coefficient threshold, we can confirm that although there is no significant difference in the quality of the overall AlN film, the ultrafast arc extinguishing strategy can indeed effectively improve the film quality by reducing arc disturbance. During our AlN deposition process, no obvious arc discharge was observed, and all arc events were micron arcs, showing that the impact of these micro-arcs on film quality is limited. Due to the real-time monitoring of the RF power supply during the experiment, the arc was effectively handled and no hard arc occurred, further ensuring the quality of the film and the stability of the process. In addition, by fine-tuning parameters such as reflection coefficient and suppression time, this study proposes an optimization method to maintain stable plasma conditions, which helps to improve the quality and uniformity of AlN films in the RF sputtering process. These findings provide important insights into the effective management of arcs in PVD systems and provide avenues for further optimization of thin film deposition techniques. |
