本研究探討以物理氣相傳輸（PVT）方法生長大尺寸且高品質碳化矽（SiC）單晶，尤其8英吋之SiC單晶對於先進電子應用至關重要。研究聚焦於影響晶體生長的關鍵因素，包括生長腔內的熱與物質傳輸，特別著重於多孔 SiC 粉中的耦合擴散機制，以提升模擬準確性。 本研究通過數值模擬分析了絕緣設計、加熱線圈配置以及溫度梯度對熱場分佈、物質傳輸和生長速率的影響。結果顯示，多孔粉末內的擴散對於準確預測物質傳輸和熱梯度相當重要；且表面間輻射模型可以準確預測熱場，故內部輻射對熱傳的影響可忽略不計。此簡化模型降低計算複雜性，卻不影響模擬結果的準確性。 模擬結果表示，多孔粉末內的傳輸擴散過程對於預測材料生長相當重要，且降低孔隙率有助於改善熱傳。調整加熱線圈數量和絕熱設計能穩定熱環境，防止多晶體邊緣產生缺陷及過高的熱應力。 本研究分析多孔粉內部擴散及熱傳的耦合作用，證明內部輻射可忽略而不影響準確性。此改進可促進電子設備製造達到高效能生產無缺陷之8英寸SiC晶體。 ;This study investigates the physical vapor transport (PVT) method for growing large, high-quality silicon carbide (SiC) single crystals, specifically targeting the 8-inch crystal size that is critical for advanced electronic applications. The research explores key factors influencing crystal growth, including heat and species transport within the growth chamber, with a particular emphasis on coupled diffusion mechanisms within the porous SiC source powder to enhance simulation accuracy and improve process understanding. Numerical simulations were employed to analyze the effects of insulation designs, heating coil configurations, and temperature gradients on heat distribution, species transport, and growth rates. The findings emphasize that diffusion within porous powder is essential for achieving precise predictions of species transport and thermal gradients. Additionally, internal radiation is shown to have negligible effects on heat transfer, with simulations confirming that surface-to-surface radiation models are sufficient for accurate predictions of the thermal field. This simplification reduces computational complexity without compromising accuracy. The results demonstrate the importance of diffusion processes in the porous powder source to refine material transport predictions and reducing porosity to improve heat transfer. Adjustments to heating coil numbers and insulation designs are also shown to stabilize thermal environments, preventing defects such as polycrystalline edges and excessive thermal stress. In conclusion, this study provides a detailed analysis of the coupled effects of diffusion within porous source powder and thermal management strategies, demonstrating that internal radiation can be neglected without sacrificing accuracy. These advancements support the efficient production of defect-free 8-inch SiC crystals, facilitating further progress in high-performance electronic device manufacturing.
