晶圓鍵合技術是先進封裝製程的關鍵技術，而為了避免損壞晶圓上的元件，需要控制製程溫度來防止晶圓承受過高的熱應力，因此後續的退火處理必須在低溫條件下進行，目前常見的鍵合方法是用表面活化技術，只須實施200 ℃低溫退火就能達到高強度鍵合，但此方法設備昂貴且須在真空環境執行，製程成本極高。本研究提出以微波活化表面輔助晶圓低溫鍵合，技術的特點是可在非真空環境下進行，不需使用昂貴或過於複雜的設備，大幅降低製造成本，方法是利用微波增強表面鍵結密度，進而低溫退火下就能達到高強度鍵合，並以親水性與疏水性表面性質之晶圓進行微波處理，探討微波處理對表面性質之影響。使用AFM量測試片微波後的表面粗糙度變化，發現微波後粗糙度會大幅變化，且微波三分鐘的表面粗糙度最佳；從SEM、TEM結果得知鍵合交互面厚度小於5 nm，EDS分析結果證實交互面成分皆為氧化物；從接觸角結果證實，疏水性表面經微波後表面性質從疏水性變成親水性；低溫退火的鍵合強度檢測結果顯示，本研究方法可在的最低退火溫度125 ℃達到高強度鍵合。;Wafer bonding technology is a critical process in advanced packaging. To prevent damage to the devices on the wafer, it is essential to control the process temperature and avoid excessive thermal stress on the wafer. Therefore, the subsequent annealing treatment must be conducted under low-temperature conditions. A commonly used bonding method is SAB technology, which can achieve high bonding strength with low-temperature annealing at 200 ℃. However, this method requires expensive equipment and must be performed in a vacuum environment, resulting in high manufacturing costs.This study proposes a microwave-assisted surface activation method for low-temperature wafer bonding. The key feature of this technique is that it can be carried out in a non-vacuum environment, without the need for costly or overly complex equipment, significantly reducing manufacturing costs. The method enhances the surface bond density using microwave energy, allowing high-strength bonding to be achieved under low-temperature annealing.Microwave treatment was applied to wafers with both hydrophilic and hydrophobic surface properties to investigate the effects of microwaves on surface characteristics. Surface roughness changes after microwave treatment were measured by AFM, and the results revealed significant changes in surface roughness, with the optimal roughness achieved after three minutes of microwave exposure.The SEM and TEM results showed that the bonding interface thickness is less than 5 nm. The EDS analysis confirmed that the interfacial layer consisted entirely of oxides. Contact angle measurements demonstrated that the hydrophobic surfaces became hydrophilic after microwave treatment. Bonding strength tests under low-temperature annealing showed that the proposed method can achieve high bonding strength at a minimum annealing temperature of 125 ℃.
