具有部分摻雜光吸收層之高功率高響應度及高頻寬漸耦合式邊射型光檢測器; High Power, High Responsivity, and High Speed Evanescently Coupled Photodiode with Partially P-doped Absorption Layer

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/9888

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/9888

Title:	具有部分摻雜光吸收層之高功率高響應度及高頻寬漸耦合式邊射型光檢測器;High Power, High Responsivity, and High Speed Evanescently Coupled Photodiode with Partially P-doped Absorption Layer
Authors:	吳衍祥;Yen-Shian Wu
Contributors:	電機工程研究所
Keywords:	漸耦合式光波導;側照式;光二極體;evanescently coupled waveguide;side-illumination;photodiode
Date:	2005-06-20
Issue Date:	2009-09-22 11:59:03 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本論文針對1.55μm波長的光纖通訊系統中接收端前級元件光二極體之製作與研究，在幾何結構上採用漸耦合式光波導結構結合部分摻雜吸收層的主動區域，以期能達到高速、高功率及高響應度的表現，首先利用模擬軟體來模擬光在前端光波導內傳遞的情形，在利用數學運算軟體模擬電性的表現並加入高功率操作的模擬參數，以此決定此邊耦合光檢測器的磊晶結構與所需之製程光罩與流程，再利用外插節拍量測法測量並分析元件之特性。
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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