| 摘要: | 本研究主要在開發結合鈣鈦礦（MAPbI3）與金屬氧化物之光偵測元件，研究架構系統性地涵蓋橫向 / 垂直光敏二極體及橫向光敏電晶體，並針對不同幾何結構之物理機制進行探討。
在橫向光敏二極體方面，本研究對比了不同功函數之電子傳輸層對元件性能的影響。實驗結果顯示，導入功函數為 3.9 eV 之 ZnO NPs 具備顯著優勢，能有效降低暗電流並提升光電流，在波長 472 nm (1 mW/cm2) 照射下，其外部量子效率 (EQE) 達 70.7%，響應度為 0.269 A/W。相較之下，功函數為 4.3 eV 之元件受限於能階匹配不佳與較高密度的介面缺陷，其 EQE 僅為 7.5%，響應度為 0.028 A/W，證實了能階調控對優化橫向架構性能的重要性。
在垂直光敏二極體方面，利用其奈米級短通道之幾何優勢，有效縮短載子漂移路徑。研究結果顯示，透過電極功函數差異與電荷傳輸層能階梯度所建立的內建電場，使元件展現優異的自供電特性。在零偏壓操作下，元件仍能維持穩定的光電流輸出與脈衝光響應，達到 29.3 % 的 EQE。
在橫向光敏電晶體架構中，本研究以原子層沉積（ALD）技術生長之氧化鋅（ZnO）作為 n 型半導體通道層，並於上方依序旋塗在橫向二極體中優化後之鈣鈦礦吸光層。透過引入 ALD-Al2O3 作為介面層，成功誘導出光閘效應（Photogating effect），並藉由場效耦合作用顯著提升元件的光學增益。最終，結合鋁摻雜氧化鋅（AZO）傳輸層，成功將 EQE 提升至 1070%，響應度達 4.07 A/W，展現了卓越的弱光偵測靈敏度。
;This research focuses on the development of hybrid photodetecting devices combining perovskite (MAPbI3) and metal oxides. The study systematically investigates three distinct architectures—lateral photodiodes, vertical photodiodes, and lateral phototransistors—and analyzes the physical mechanisms underlying each configuration.
Regarding lateral photodiodes, the impact of electron transport layers with different work functions on device performance was compared. Experimental results demonstrate that incorporating ZnO NPs with a 3.9 eV work function provides significant advantages, effectively reducing dark current and enhancing photocurrent. Under illumination at a wavelength of 472 nm(1 mW/cm2), the device achieved an External Quantum Efficiency (EQE) of 70.7% and a responsivity of 0.269 A/W. In contrast, the 4.3 eV ZnO device exhibited inferior performance due to poor energy alignment and high interface defect density, yielding an EQE of only 7.5% and a responsivity of 0.028 A/W, highlighting the importance of energy level engineering for optimizing lateral architectures.
In the case of vertical photodiodes, the nanometer-scale short-channel geometry was utilized to effectively minimize carrier drift paths. The results indicate that the built-in electric field, established through electrode work function differences and energy level gradients, enables excellent self-powered characteristics. Under zero-bias conditions, the device maintains stable photocurrent output and pulse photoresponse, achieving an EQE of 29.3%.
For the lateral phototransistor architecture, an atomic layer deposition (ALD) grown zinc oxide (ZnO) film serves as the n-type semiconductor channel, with the optimized perovskite light-absorbing layer from the lateral photodiode section subsequently spin-coated on top. By introducing ALD-Al2O3 as an interfacial layer, a robust photogating effect was successfully induced, significantly enhancing optical gain through field-effect coupling. Finally, combining aluminum-doped zinc oxide (AZO) transport layer, the EQE was boosted to 1070% with a responsivity of 4.07 A/W, demonstrating exceptional sensitivity for weak-light detection. |
