| 摘要: | 隨著全球暖化與能源短缺，特別是人工智慧 (AI) 帶來的電力需求激增，如何提升電子元件的能源使用效率，已成為現代功率元件領域的重要課題。其中，金屬氧化物半導體場效電晶體 (MOSFET) 是功率管理系統中的核心元件。本研究旨在探討寬能隙氧化物材料——氧化鋅 (ZnO) 與氧化鎵 (Ga2O3) 於金屬氧化物半導體元件開發與整合的可行性。在材料製備方面，本研究聚焦於實現氧化鋅穩定 p 型摻雜的技術。選用五族元素磷 (P) 作為摻雜劑，並透過冷壓與兩階段高溫燒結技術製備 p 型氧化鋅塊材。研究中利用 X 光繞射儀 (XRD) 與拉曼光譜分析粉體結晶性，並透過掃描式電子顯微鏡 (SEM) 與能量散射光譜儀 (EDS) 觀察形貌與元素比例。實驗結果顯示，在 50°C 至 200°C 的環境下，摻雜濃度為 0.4at% 的磷原子能展現最穩定的 p 型半導體特性及最佳的摻雜效果。在燒結氣氛研究中，真空環境有助於氧化鋅塊材維持穩定的 p 型特性與較低電阻率；而富氧環境則能有效抑制 n 型本徵缺陷，適合製備金屬氧化物半導體場效電晶體之基板。在元件製作方面，本研究成功於 p 型氧化鋅塊材基板上製備 n 型氧化鋅 MOSFET 元件。此外，針對具備寬能隙特性的第四代半導體氧化鎵，本研究利用液態金屬剝離轉印法所製備出的超薄氧化鎵作為通道材料，開發出 n 型氧化鎵 MOSFET 元件。期望透過對氧化鋅材料 p 型摻雜與電晶體製程參數的最佳化，為高效能功率管理與能源電子系統提供可行的技術方案。;With the challenges of global warming, energy shortages, and the surging demand for electricity in artificial intelligence, improving the energy efficiency of electronic components has become a critical research topic in the field of modern power devices. Power metal-oxide-semiconductor field-effect transistors (MOSFETs) are core components in these power management systems. This study explores the feasibility of utilizing wide-bandgap oxide materials—zinc oxide (ZnO) and gallium oxide (Ga2O3)—for the development of high-performance MOSFETs. In terms of material preparation, this study focuses on achieving stable p-type doping of zinc oxide. Phosphorus (P), a group 5 element, was used as the dopant to prepare p-type zinc oxide bulk materials through cold pressing and two-stage high-temperature sintering. The crystallinity, morphology, and elemental composition of the ZnO powder were analyzed using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS).Experimental results indicate that a phosphorus doping concentration of 0.4 at% exhibits the most stable p-type semiconductor characteristics within a temperature range of 50°C to 200°C. Simultaneously, ZnO:P powder demonstrates the optimal phosphorus p-type doping effect at a sintering temperature of 1100°C. Research into the sintering atmosphere shows that while a vacuum environment helps maintain stable p-type characteristics and low resistivity, an oxygen-rich environment effectively suppresses n-type intrinsic defects, making it highly suitable for fabricating MOSFET substrates. Regarding device fabrication, this study successfully fabricated n-type ZnO MOSFETs on p-type bulk ZnO substrates. Furthermore, for Ga2O3, a fourth-generation semiconductor with superior wide-bandgap characteristics, a liquid metal lift-off transfer method was utilized to produce ultrathin channel materials for n-type Ga2O3 MOSFETs. By optimizing the p-type doping process and transistor fabrication parameters, this research provides a feasible technological path for advanced energy management in high-performance electronic systems. |
