以金屬鋅靶材利用脈衝直流磁控濺鍍法鍍製FZO薄膜之研究

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姓名

黃治富(Zhi-Fu Huang) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

以金屬鋅靶材利用脈衝直流磁控濺鍍法鍍製FZO薄膜之研究
(Research of F-doped ZnO thin films deposited by pulse DC magnetron sputtering of zinc target)

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摘要(中)

本論文以一新式製程方式，利用脈衝直流磁控濺鍍法(Pulsed DC Magnetron sputtering)，使用價格便宜的純金屬鋅靶材鍍製FZO(Fluorine-doped zinc oxide)薄膜，在鍍膜過程中改變氫氣、氧氣、以及四氟化碳之氣體流量，探討在不同氣體流量下，FZO薄膜之電特性以及光學特性之改變。
從文獻得知，氫氣可在氧化鋅薄膜間隙裡形成shallow donor，可大量增加載子濃度，降低電阻率。
常溫製程下，FZO:H最低電阻率可達到8.2×10-4Ω-cm、遷移率10.1cm2/V-s、載子濃度7.52×1020cm-3，。
但在退火過程中，由於shallow donor的氫，極容易溢出薄膜，使載子濃度在500℃，從原先8×1020cm-3下降至5×1019cm-3，從此結果得知，FZO:H在高溫中使載子容易流失。
FZO:H雖不耐高溫，但在紅外光譜，表現極為出色；波長800~1800nm之平均穿透高達82%，而同波段下，其他TCO最高只能達到64%，對於利用到紅外光發電之太陽能電池相當有利。

摘要(英)

A new transparent conducting oxide (TCO), Fluorine-doped ZnO (FZO) film has been deposited on the glass substrate using pulse DC magnetron sputtering with zinc target as well as Ar, H2, O2 and CF4 containing gas mixtures at room temperature.
In the zinc oxide (ZnO:H) film, when the hydrogen ions formed shallow donors, the carrier concentration will be increased significantly. And the resistivity will be reduced. When introducing 1 sccm CF4 during the ZnO:H process, we can fabricate the FZO:H film with the lowest resistivity 8.2×10-4 Ω-cm; the better mobility 10.1 cm2/V-s; and the carrier concentrations 7.52×1020cm-3. Besides, their average transmittance in the visible region was over 82.7%. After the rapid thermal annealing (RTA) process, the carrier concentration of FZO:H film decreased from 8×1020cm-3 to 5×1019 cm-3. That is because the shallow donors, hydrogen ions, flowed away the FZO:H film. Besides, to compare the infrared spectrum (wavelength from 800nm to 1800nm), the average transmittance of FZO:H film is over 82% and the other TCO can only reach to 64%.
All of the results show that we have found a cost effective and mass-production process suitable for the application of manufacture in the real-world industry. FZO:H can be used in the transparent window electrode of solar cell because of its good transmittance in infrared spectrum.

關鍵字(中)

★ 直流磁控濺鍍
★ 透明導電膜
★ 氧化鋅

關鍵字(英)

★ transparent conducting oxide
★ DC magnetron sputtering
★ FZO
★ F-doped ZnO

論文目次

目錄 I
摘要 III
Abstract IV
致謝 V
圖目錄 VI
表目錄 IX
第一章緒論 1
1-1 前言 1
1-2 研究動機 4
1-3 論文架構 10
第二章基本理論 11
2-1 透明導電膜特性 11
2-1-1 電特性 11
2-1-2光學特性 14
2-2 磁控濺鍍機制 19
2-2-1 濺鍍原理 19
2-2-2直流輝光放電與電漿簡介 19
2-2-3 磁控濺鍍 20
2-3 ZnO透明導電膜材料介紹 23
第三章實驗步驟與量測儀器說明 25
3-1 實驗流程與前置步驟 25
3-2 鍍製儀器-直流磁控濺鍍系統 26
3-3 量測系統 27
3-3-1 光譜儀 27
3-3-2 四點探針 27
3-3-3 霍爾效應量測系統 29
3-3-4 X光繞射系統(XRD) 32
第四章實驗結果與討論 33
4-1氧氣對於氧化鋅之影響 33
4-2 氫氣對於氧化鋅之影響 37
4-3 氟(CF4)的摻雜量對於氧化鋅之影響 39
4-4 不同參數下H-doped FZO的特性 42
4-5 快速熱退火對於FZO與FZO:H的影響 48
第五章結論 53
參考文獻 55

參考文獻

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指導教授

陳昇暉、李正中
(Sheng-Hui Chen、Cheng-Chung Lee)

審核日期

2011-8-1

推文