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姓名 陳彥凱(Yen-kai Chen) 查詢紙本館藏 畢業系所 電機工程學系 論文名稱 銻化物金屬-絕緣物-半導體異質接面場效電晶體之元件發展與特性研究
(Device Development and Characterization of Sb-based Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors)相關論文 檔案 [Endnote RIS 格式]
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摘要(中) 隨著積體電路須具低功率及高性能的要求，銻化物材料系列已被評估具有高潛力適合應用於高速電子元件，其中砷化銦及銻化銦鎵皆擁有III-V族半導體中高載子遷移率等材料特性。在眾多高介電係數材料之中，氧化鋁是一種非常有潛力成為高介電係數材料的候選之一，其本身具有足夠的介電係數、高能隙、高崩潰電場、良好的熱穩定性以及非晶型態的晶體結構。因此，在本論文中我們使用高介電係數材料氧化鋁作為閘極氧化層，成功發展出銻化物金屬-絕緣體-半導體異質接面場效電晶體元件，並且作了深入的分析與探討。
首先針對原子層沉積所成長的氧化鋁薄膜，進行厚度測量和表面粗糙度之物性分析以及利用橢圓儀評估光學特性，並在砷化銦基板上使用不同化學溶液作表面處理，再將其製作成電容器，利用電容-電壓、電流-電壓與崩潰電場量測，研究電容器之電性特性，進而決定最佳的氧化鋁薄膜元件適用條件。最後，將氧化鋁薄膜成長於砷化銦/銻化鋁(InAs/AlSb)和銻化銦鎵/銻化鋁(InGaSb/AlSb)磊晶結構上，製作成電晶體並研究元件的特性。InAs/AlSb n-channel MIS-HFET元件特性上，閘極長度Lg = 2 μm，其汲極飽和電流為IDSS = 371 mA/mm及轉導增益Gm = 604 mS/mm，次臨限斜率為S.S. = 137 mV/dec，電流增益截止頻率fT為10.6 GHz。InGaSb/AlSb p-channel MIS-HFET的元件特性在閘極長度Lg = 1 μm，得到最大汲極飽和電流為31 mA/mm，轉導增益為Gm = 43 mS/mm以及次臨限斜率為S.S. = 153 mV/dec。
摘要(英) Since low-power consumption and high performance are required in the integrated circuits, Sb-based materials are considered to be high potential candidates in high speed electronic device applications, due to the InAs and InGaSb showing highest carrier mobility properties among III-V compound semiconductors. Among a number of high-k dielectric materials, Al2O3 become one of the candidates for high dielectric constant materials used for most electronics. The major reasons are that Al2O3 shows a large dielectric constant, a large bandgap, a high breakdown field, a good thermal stability, and amorphous type of crystal structure. Therefore, in this thesis, the high dielectric constant material of Al2O3 had been used as gate dielectric to develope the Sb-based metal-insulator-semiconductor heterojunction field effect transistors (MIS-HFETs) with in-depth analysis and discussion.
We first analyzed physical and optical properties of the Al2O3 thin film deposited by atomic layer deposition. The physical properties analysis included film thickness, surface roughness and the optical properties by ellipsometer. The various surface treatments of InAs substrate using different chemical solutions were studied in order to investigate the properties of the InAs MOS capacitors. The electrical property characteristics included C-V, I-V and J-E measurements were characterized to obtain the optimum conditions of Al2O3 film for MIS-HFET application. Finally, we fabricated MIS-HFETs using the Al2O3 deposited by ALD as gate dielectric on the conventional InAs/AlSb and InGaSb/AlSb HFET epitaxy materials. The fabricated InAs/AlSb n-channel MIS-HFET with a gate length of 2 μm, demonstrated the maximum drain current (IDSS) of 371 mA/mm, a transconductance (Gm) of 604 mS/mm, and a subthreshold slope is 137 mV/dec, and a peak current gain cut-off frequency (fT) of 10.6 GHz. The InGaSb/AlSb p-channel MIS-HFET with 1μm gate length showed, the maximum drain current of 31 mA/mm, transconductance of 43 mS/mm, and the subthreshold slope of 153 mV/dec.
關鍵字(中) ★ 銻化物
★ 金絕半異質接面場效電晶體
★ 原子層沉積關鍵字(英) ★ Sb-based
★ MIS-HFET
★ ALD論文目次 摘要 ....................................................................................................................................... I
Abstract ............................................................................................................................... II
誌謝 ................................................................................................................................... III
目錄 .................................................................................................................................... IV
圖目錄 ............................................................................................................................... VII
表目錄 ............................................................................................................................... XII
第一章 導論 ....................................................................................................................... 1
1.1 研究動機 ................................................................................................................... 1
1.2 高介電係數材料之簡介 ........................................................................................... 4
1.3 金屬-絕緣物-半導體異質接面場效電晶體發展現況 ............................................ 7
1.4 論文架構 ................................................................................................................. 14
第二章 磊晶結構與材料物性分析 ................................................................................. 15
2.1 前言 ......................................................................................................................... 15
2.2 銻化物材料系統之磊晶結構與材料分析 ............................................................. 15
2.2.1 InAs/AlSb HFET之磊晶結構 ........................................................................ 15
2.2.2 覆蓋層為InAs/In0.5Al0.5As之InGaSb/AlSb HFET磊晶結構 ..................... 19
2.2.3 覆蓋層為InAs之InGaSb/AlSb HFET磊晶結構 ......................................... 22
2.3 結論 ......................................................................................................................... 25
第三章 高介電係數材料物性分析與電容器特性研究 ................................................. 26
3.1 前言 ......................................................................................................................... 26
3.2 原子層沉積系統 ..................................................................................................... 26
3.2.1 原子層沉積系統簡介 ..................................................................................... 26
3.2.2 ALD之成長機制及製程原理 ........................................................................ 28
3.3 高介電係數材料氧化鋁薄膜物性分析 ................................................................. 34
3.3.1 氧化鋁薄膜之折射率分析 ............................................................................. 34
V
3.3.2 氧化鋁薄膜之厚度測量 ................................................................................. 35
3.3.3 氧化鋁薄膜之表面粗糙度分析 ..................................................................... 37
3.4 金屬-絕緣物-半導體電容器之元件特性 .............................................................. 39
3.4.1 電容器製作流程 ............................................................................................. 39
3.4.2 不同化學表面清洗方式之電容器元件特性 ................................................. 41
3.4.3 快速熱退火處理對電容器電性之影響 ......................................................... 45
3.5 結論 ......................................................................................................................... 47
第四章 MIS-HFET元件發展與特性 ............................................................................ 48
4.1 前言 ......................................................................................................................... 48
4.2 MIS-HFET之製程發展 .......................................................................................... 48
4.2.1 歐姆接觸之製程發展 ..................................................................................... 48
4.2.2 MIS-HFET元件製作流程 .............................................................................. 53
4.3 氧化鋁薄膜於不同溫度沉積之InAs/AlSb MIS-HFET元件性能 ...................... 56
4.3.1 氧化鋁薄膜為200 ℃/6 nm沉積之元件特性 ............................................... 58
4.3.2 氧化鋁薄膜為250 ℃/6 nm沉積之元件特性 ............................................... 61
4.3.3 氧化鋁薄膜為300 ℃/6 nm沉積之元件特性 ............................................... 63
4.3.4 快速熱退火處理之InAs/AlSb MIS-HFET元件特性 ................................... 66
4.4 化學表面處理之InAs/AlSb MIS-HFET元件性能 .............................................. 69
4.4.1 HCl/H2O(1/5)處理之元件特性 ...................................................................... 70
4.4.2 HCl/H2O(1/10)處理之元件特性 .................................................................... 71
4.5 成長氧化鋁薄膜於InGaSb/AlSb MIS-HFET之元件性能 .................................. 74
4.5.1 覆蓋層結構為InAs/In0.5Al0.5As之元件特性 ................................................ 75
4.5.2 覆蓋層結構為InAs之元件特性 ................................................................... 77
4.6 結論 ......................................................................................................................... 79
第五章 元件討論與比較 ................................................................................................. 80
5.1 前言 ........................................................................................................................ 80
5.2 氧化鋁薄膜沉積溫度及熱退火製程對元件性能之影響 .................................... 80
5.2.1 氧化鋁薄膜沉積溫度對元件特性之影響 ..................................................... 80
5.2.2 快速熱退火製程對元件特性之影響 ............................................................. 85
VI
5.3 化學表面處理對元件性能之影響 ......................................................................... 90
5.4 覆蓋層結構與厚度對元件性能之影響 ................................................................. 95
5.5 結論 ....................................................................................................................... 100
第六章 結論與未來發展 ............................................................................................... 101
6.1 結論 ...................................................................................................................... 101
6.2 未來發展 .............................................................................................................. 102
參考文獻 ........................................................................................................................... 104
附錄1 上下電容器製作流程 .......................................................................................... 109
附錄2 MIS-HFET元件製作流程 ................................................................................... 111參考文獻 [1]. J. B. Boos, W. Kruppa, B. R. Bennet, D. Park and S. W. Kirchofer, “AlSb/InAs HEMTs for low-voltage, high-speed applications,“ IEEE Trans. Electron Devices, vol. 45, pp. 1869-1875, 1998.
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