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    类别 日期 题名 作者 档案
    [電機工程研究所] 期刊論文 1993 CARBON PLUS ARGON COIMPLANTATION FOR GAAS P-CHANNEL METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS CHAN,YJ; CHEN,CH
    [電機工程研究所] 期刊論文 1994 HIGH-TEMPERATURE PERFORMANCE OF GAINP AND ALINP HEMTS WITH WSIX GATES CHAN,YJ; KUO,JM
    [電機工程研究所] 期刊論文 1994 TRAP STUDIES IN GAINP GAAS AND ALGAAS GAAS HEMTS BY MEANS OF LOW-FREQUENCY NOISE AND TRANSCONDUCTANCE DISPERSION CHARACTERIZATIONS CHAN,YJ; PAVLIDIS,D
    [電機工程研究所] 期刊論文 1996 Reactive-ion etching of WSix in CF4+O-2 and the associated damage in GaAs Chan,YJ; Su,CS; Sung,KT
    [電機工程研究所] 期刊論文 1997 Characteristics of a In-0.52(AlxGa1-x)(0.48)As/In0.53Ga0.47As(0<=x<=1) heterojunction and its application on HEMT's Chan,YJ; Wu,CS; Chen,CH; Shieh,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1996 GaAs-based In0.29Al0.71As/In0.3Ga0.7 as high-electron mobility transistors Chan,YJ; Wu,CS; Chyi,JI; Shieh,JL
    [電機工程研究所] 期刊論文 1994 HIGH UNIFORMITY OF AL0.3GA0.7AS/IN0.15GA0.85AS DOPED-CHANNEL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON 3'' GAAS SUBSTRATES CHAN,YJ; YANG,MT; YEH,TJ; CHYI,JI
    [電機工程研究所] 期刊論文 1995 AL0.3GA0.7AS/INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS (DCFETS) CHAN,YJ; YANG,MT
    [電機工程研究所] 期刊論文 1995 DEVICE LINEARITY IMPROVEMENT BY AL0.3GA0.7AS/IN0.2GA0.8AS HETEROSTRUCTURE DOPED-CHANNEL FETS CHAN,YJ; YANG,MT
    [電機工程研究所] 期刊論文 1993 ENHANCEMENT AND DEPLETION-MODE ALGAAS/IN0.15GA0.85AS HEMTS FABRICATED BY SELECTIVE ION-IMPLANTATION CHAN,YJ; YANG,MT
    [電機工程研究所] 期刊論文 1995 HIGH-TEMPERATURE PERFORMANCE OF GA0.51IN0.49P/IN0.2GA0.8AS PSEUDOMORPHIC HEMTS WITH WSIX GATES CHAN,YJ; YEH,TJ; KUO,JM
    [電機工程研究所] 期刊論文 1994 IN0.49GA0.15P/IN0.15GA0.85AS HETEROSTRUCTURE PULSED DOPED-CHANNEL FETS CHAN,YJ; YEH,TJ; KUO,JM
    [電機工程研究所] 期刊論文 2005 Photonic crystal directional couplers formed by InAlGaAs nano-rods Chen,CC; Chen,CY; Wang,WK; Wang,WK; Huang,FH; Lin,CK; Chiu,WY; Chan,YJ
    [電機工程研究所] 期刊論文 2000 Improved microwave performance on low-resistivity Si substrates by Si+ ion implantation Chen,PQ; Chan,YJ
    [電機工程研究所] 期刊論文 2000 Molecular beam epitaxy regrowth and device performance of GaAs-based pseudomorphic high electron mobility transistors using a thin indium passivation layer Chen,SS; Lin,CC; Peng,CK; Chan,YJ
    [電機工程研究所] 期刊論文 2002 Analysis, design, and optimization of InGaP-GaAsHBT matched-impedance wide-band amplifiers with multiple feedback loops Chiang,MC; Lu,SS; Meng,CC; Yu,SA; Yang,SC; Chan,YJ
    [電機工程研究所] 期刊論文 1999 Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design Chien,FT; Chan,YJ
    [電機工程研究所] 期刊論文 1997 Monolithic optical receiver fabricated by AlGaAs/InGaAs doped-channel heterostructures Chien,FT; Chan,YJ
    [電機工程研究所] 期刊論文 2000 Microwave power performance comparison between single and dual doped-channel design in AlGaAs/InGaAs HFET's Chien,FT; Chiol,SC; Chan,YJ
    [電機工程研究所] 期刊論文 2001 Device linearity and gate voltage swing improvement by Al0.3Ga0.7As/In0.15Ga0.85As double doped-channel design Chien,FT; Chiu,HC; Yang,SC; Chen,CW; Chan,YJ
    [電機工程研究所] 期刊論文 2000 Monolithically integrated optoelectronic receivers by AlGaAs/InGaAs doped-channel heterostructures Chien,FT; Kuo,CW; Chan,YJ
    [電機工程研究所] 期刊論文 2005 Device performance improvement of InGaP/InGaAs doped-channel FETs Chien,FT; Yin,JM; Chiu,HC; Chan,YJ
    [電機工程研究所] 期刊論文 2004 The microwave power performance comparisons of AlxGa1-xAs/In0.15Ga0.85As (x=0.3, 0.5, 0.7, 1.0) doped-channel HFETs Chin,HC; Yang,SC; Chan,YJ; Chen,SH; Liu,WS; Chyi,JI
    [電機工程研究所] 期刊論文 2000 Reducing source and drain resistances in InGaP/lnGaAs doped-channel HFETs using delta-doping Schottky layer Chiu,HC; Chien,FT; Yang,SC; Kuo,CW; Chan,YJ
    [電機工程研究所] 期刊論文 2002 Enhanced power performance of enhancement-mode Al0.5Ga0.5As/In0.15Ga0.85As pHEMTs using a low-k BCB passivation Chiu,HC; Hwu,MJ; Yang,SC; Chan,YJ
    [電機工程研究所] 期刊論文 2000 High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance Chiu,HC; Yang,SC; Chan,YJ; Kuo,JM
    [電機工程研究所] 期刊論文 2001 High power In0.49Ga0.51P/In0.15Ga0.85As heterostructure doped-channel FETs Chiu,HC; Yang,SC; Chan,YJ; Lin,HH
    [電機工程研究所] 期刊論文 2002 High power density and large voltage swing of enhancement-mode Al0.5Ga0.5As/InGaAs pseudomorphic high electron mobility transistor for 3.5V L-band applications Chiu,HC; Yang,SC; Chan,YJ
    [電機工程研究所] 期刊論文 2001 AlGaAs/InGaAs heterostructure doped-channel FET's exhibiting good electrical performance at high temperatures Chiu,HC; Yang,SC; Chan,YJ
    [電機工程研究所] 期刊論文 2002 Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching Chiu,HC; Yang,SC; Chien,FT; Chan,YJ
    [電機工程研究所] 期刊論文 2001 High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply Chiu,HC; Yang,SC; Chien,FT; Chan,YJ
    [電機工程研究所] 期刊論文 2003 0.2-mu m gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications Chiu,HC; Yang,SC; Lin,CK; Hwu,MJ; Chan,YJ
    [電機工程研究所] 期刊論文 2004 K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology Chiu,HC; Yang,SC; Lin,CK; Hwu,MJ; Chiou,HK; Chan,YJ
    [電機工程研究所] 期刊論文 2003 High performance BCB-bridged AlGaAs/InGaAs power HFETs Chiu,HC; Yeh,TJ; Yang,SC; Hwu,MJ; Chan,YJ
    [電機工程研究所] 期刊論文 2005 Improvement of mesa-sidewall leakage current using benzocyclobuten sidewall process in InGaAs/InP MSM photodetector Chiu,WY; Huang,FH; Wu,YS; Lin,DM; Chan,YJ; Chen,SH; Chyi,JI; Shi,JW
    [電機工程研究所] 期刊論文 2006 Leaky-wave photodiodes with a partially p-doped absorption layer and a distributed Bragg reflector (DBR) for high-power and high-bandwidth-responsivity product performance Chiu,WY; Shi,JW; Wang,WK; Wu,YS; Chan,YJ; Huang,YL; Xuan,R
    [光電科學與工程學系] 期刊論文 2011 Monolithically integrated photonic-crystal devices with photodiodes Chiu,WY; Wu,YS; Chan,YJ; Wang,TD; Hou,CH; Chien,HT; Chen,CC
    [光電科學研究中心] 期刊論文 1995 PERFORMANCE ENHANCEMENT USING WSIX/ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS CHU,CC; CHAN,YJ; YUANG,RH; CHYI,JI; LEE,CT
    [電機工程研究所] 期刊論文 1995 LOW-THRESHOLD INALGAAS/ALGAAS STRAINED-QUANTUM-WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY CHYI,JI; GAU,JH; SHIEH,JL; PAN,JW; CHAN,YJ; HONG,JW; HUANG,MF
    [電機工程研究所] 期刊論文 1994 CHARACTERISTICS OF IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES GROWN ON GAAS USING INALAS BUFFERS CHYI,JI; SHIEH,JL; WU,CS; LIN,RM; PAN,JW; CHAN,YJ; LIN,CH
    [電機工程研究所] 期刊論文 2003 A fully integrated dual-band VCO by 0. 18 mu m CMOS technologies Ho,CC; Kuo,CW; Hisao,CC; Chan,YJ
    [電機工程研究所] 期刊論文 2004 A fully integrated 2.4 GHz class-E amplifier with a 63% PAE by 0.18 mu m CMOS technologies Ho,CC; Kuo,CW; Hsiao,CC; Chan,YJ
    [電機工程研究所] 期刊論文 2003 A 0.18 mu m p-MOSFET large-signal RF model and its application on MMIC design Ho,CC; Kuo,CW; Hsiao,CC; Chan,YJ
    [電機工程研究所] 期刊論文 2005 VCO phase-noise improvement by gate-finger configuration of 0.13-mu m CMOS transistors Ho,CC; Liang,GH; Huang,CF; Chan,YJ; Chang,CS; Chao,CP
    [電機工程研究所] 期刊論文 2000 6.8GHz monolithic oscillator fabricated by 0.35 mu m CMOS technologies Hsiao,CC; Kuo,CW; Chan,YJ
    [電機工程研究所] 期刊論文 2002 2.4 GHz voltage control oscillator and power amplifier monolithic microwave integrated circuits based on 0.25 mu m complementary metal-oxide-semiconductor technologies Hsiao,CC; Kuo,CW; Ho,CC; Chan,YJ
    [電機工程研究所] 期刊論文 2002 Improved quality-factor of 0.18-mu m CMOS active inductor by a feedback resistance design Hsiao,CC; Kuo,CW; Ho,CC; Chan,YJ
    [電機工程研究所] 期刊論文 2003 A novel double-recessed 0.2-mu m T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication Hwu,MJ; Chiu,HC; Yang,SC; Chan,YJ
    [電機工程研究所] 期刊論文 2004 Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors Hwu,MJ; Chju,HC; Yang,SC; Chan,YJ; Chang,LB
    [電機工程研究所] 期刊論文 1996 Monolithic microwave AlGaAs/InGaAs doped-channel FET switches Ke,LW; Chan,YJ; Chiang,YC
    [電機工程研究所] 期刊論文 2004 Simple analytical model of CMOS transimpedance amplifier to enhance operational bandwidth Kuo,CW; Ho,CC; Hsiao,CC; Chan,YJ
    [電機工程研究所] 期刊論文 2003 Scaleable large-signal model of 0.18 mu m CMOS process for rf power predictions Kuo,CW; Hsiao,CC; Ho,CC; Chan,YJ
    [電機工程研究所] 期刊論文 2001 2 Gbit/s transimpedance amplifier fabricated by 0.35 mu m CMOS technologies Kuo,CW; Hsiao,CC; Yang,SC; Chan,YJ
    [物理研究所] 期刊論文 1993 CRYOGENIC AND HIGH-TEMPERATURE OPERATION OF AL0.52IN0.48P/IN0.2GA0.8AS HIGH-ELECTRON-MOBILITY TRANSISTORS KUO,JM; CHAN,YJ
    [電機工程研究所] 期刊論文 2004 Improved CMOS microwave linearity based on the modified large-signal BSIM model Lai,HH; Hsiao,CC; Kuo,CW; Chan,YJ; Sato,T
    [電機工程研究所] 期刊論文 1997 CHF3+BCl3 reactive ion etching in AlGaAs/GaAs heterostructures Lai,LS; Chan,YJ; Kao,HC
    [環境工程研究所 ] 期刊論文 1997 Reduced impact ionization by using In-0.53(AlxGa1-x)(0.47)As (x=0.1,0.2) channel in InP HEMTs Lai,LS; Chan,YJ; Pan,JW; Sheih,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1999 InAlGaAs fully quaternary doped-channel FETs recessed by CHF3+BCl3 reactive ion etching Lai,LS; Kao,HC; Chan,YJ
    [電機工程研究所] 期刊論文 2005 CMOS RF band-pass filter design using the high quality active inductor Liang,KH; Ho,CC; Kuo,CW; Chan,YJ
    [電機工程研究所] 期刊論文 2005 Transient pulsed analysis on GaNHEMTs at cryogenic temperatures Lin,CH; Wang,WK; Lin,PC; Lin,CK; Chang,YJ; Chan,YJ
    [電機工程研究所] 期刊論文 2002 Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors Lin,CK; Chan,YJ
    [電機工程研究所] 期刊論文 2005 BCB-bridged distributed wideband SPST switch using 0.25-mu m In0.5Al0.5As-In0.5Ga0.5As metamorphic HEMTs Lin,CK; Wang,WK; Chan,YJ; Chiou,HK
    [電機工程研究所] 期刊論文 2002 A new empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs Lin,CK; Wang,WK; Chan,YJ
    [電機工程研究所] 期刊論文 2004 Single step electron-beam lithography for asymmetric recess and gamma gate in high electron mobility transistor fabrication Lin,CK; Wang,WK; Hwu,MJ; Chan,YJ
    [電機工程研究所] 期刊論文 2005 Power performance enhancement of metamorphic In0.3Al0.7As/In0.45Ga0.55As HEMTs using pseudomorphic channel design Lin,CK; Wu,JC; Chan,YJ; Wu,JS; Pan,YC; Tsai,CC; Lai,JT
    [電機工程研究所] 期刊論文 2004 Performance enhancement by the In0.65Ga0.35As pseudomorphic channel on the In0.5Al0.5As metamorphic buffer layer Lin,CK; Wu,JC; Wang,WK; Chan,YJ; Wu,JS; Pan,YC; Tsai,CC; Lai,JT
    [電機工程研究所] 期刊論文 2003 A novel 1.55 mu m dual-mode SSO/MSM photodetector Lin,SM; Huang,FH; Lin,CK; Yang,SC; Lin,YH; Yu,YC; Chan,YJ
    [電機工程研究所] 期刊論文 2000 2.4 GHz single-balanced diode mixer fabricated on Al2O3 substrate by thin-film technology Lin,YH; Chan,YJ
    [電機工程學系] 期刊論文 2010 Stability Improvement of Organic Thin-Film Transistors Using Stacked Gate Dielectrics Lo,PY; Li,PW; Chan,YJ
    [電機工程研究所] 期刊論文 2006 Study of carrier transport by pentacene thin-film transistors at high temperatures Lo,PY; Pei,ZW; Hwang,JJ; Tseng,HY; Chan,YJ
    [電機工程學系] 期刊論文 2011 Anode engineering for photocurrent enhancement in a polymer solar cell and applied on plastic substrate Tsai,HW; Pei,ZW; Chen,CC; Cheng,SJ; Hsieh,WS; Li,PW; Chan,YJ
    [電機工程學系] 期刊論文 2010 A conductor/insulator/semiconductor polymer solar cell by an ultra-thin polymer insulator Tsai,HW; Pei,ZW; Huang,TH; Li,PW; Chan,YJ
    [電機工程研究所] 期刊論文 2003 A modified scalable large-signal rf model for quasi-enhancement-mode AlGaAs/InGaAs pHEMTs Wang,CW; Lin,CK; Yang,SC; Chan,YJ; Gan,TH
    [電機工程研究所] 期刊論文 2004 Low damage, Cl-2-based gate recess etching for 0.3-mu m gate-length AlGaN/GaN HEMT fabrication Wang,WK; Li,YJ; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2004 Low-k BCB passivation on AlGaN-GaN HEMT fabrication Wang,WK; Lin,CH; Lin,PC; Lin,CK; Huang,FH; Chan,YJ; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2004 A new self-defined empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs Wang,WK; Lin,CK; Wu,CC; Li,YJ; Chan,YJ
    [電機工程研究所] 期刊論文 2005 Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication. Wang,WK; Lin,PC; Lin,CH; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 2005 Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN-GaNHEMT fabrication Wang,WK; Lin,PC; Lin,CH; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI
    [電機工程研究所] 期刊論文 1995 DOUBLE-HETEROJUNCTION PSEUDOMORPHIC ALGAAS/IN0.15GA0.85 AS HEMT AND ITS SHORT-CHANNEL EFFECTS WU,CS; CHAN,YJ; CHEN,CD; CHUANG,TM; JUANG,FY; CHANG,CC; CHYI,JI
    [電機工程研究所] 期刊論文 1996 In-0.52(AlxGa1-x)(0.48)As/In0.53Ga0.47As(0<=x<=1) heterostructure and its application on HEMTs Wu,CS; Chan,YJ; Chen,CH; Shieh,JL; Chyi,JL
    [電機工程研究所] 期刊論文 1995 IN-0.52(AL0.9GA0.1)(0.48)AS/IN0.53GA0.47AS HEMT WITH IMPROVED DEVICE RELIABILITY WU,CS; CHAN,YJ; SHIEN,JL; CHYI,JI
    [電機工程研究所] 期刊論文 2005 High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-mu m wavelength Wu,YS; Shi,JW; Wu,JY; Huang,FH; Chan,YJ; Huang,YL; Xuan,R
    [電機工程研究所] 期刊論文 1996 The reduction of impact ionization and improvement of device reliability in heterostructure doped-channel FETs Yang,MT; Chan,YJ; Chang,M
    [電機工程研究所] 期刊論文 1994 CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS YANG,MT; CHAN,YJ; CHEN,CH; CHYI,JI; LIN,RM; SHIEH,JL
    [電機工程研究所] 期刊論文 1996 Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates Yang,MT; Chan,YJ; Shieh,JL; Chyi,JI
    [電機工程研究所] 期刊論文 1996 Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al0.3Ga0.7As/In(0.2)Gao(0.8)As heterostructures Yang,MT; Chan,YJ
    [電機工程研究所] 期刊論文 1994 THERMAL-STABILITY OF STRAINED ALGAAS/INXGA1-XAS (0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL STRUCTURES YANG,MT; LIN,RM; CHAN,YJ; SHIEH,JL; CHYI,JI
    [電機工程研究所] 期刊論文 2000 Reactive-ion-etching (AlxGa1-x)(0.5)In0.5P quaternary compounds using chlorine and fluorine mixing plasma Yang,SC; Chan,YJ; Chang,KH; Lin,KC
    [電機工程研究所] 期刊論文 2001 (AlxGa1-x)(0.5)In0.5P/In0.15Ga0.85As (x = 0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications Yang,SC; Chiu,HC; Chan,YJ; Lin,HH; Kuo,JM
    [電機工程研究所] 期刊論文 2001 RIE gate-recessed (Al0.3Ga0.7)(0.5)In0.5P/InGaAs double doped-channel FETs using CHF3+BCl3 mixing plasma Yang,SC; Chiu,HC; Chien,FT; Chan,YJ; Kuo,JM
    [電機工程研究所] 期刊論文 2003 Submicron RIE recessed InGaP/InGaAs doped-channel FETs Yang,SC; Chiu,HC; Hwu,MJ; Wang,WK; Lin,CK; Chan,YJ
    [電機工程研究所] 期刊論文 2000 Improved microwave performance of spiral inductors on Si substrates by chemically anodizing a porous silicon layer Yu,MJ; Chan,YJ; Laih,LH; Hong,JW
    [電機工程研究所] 期刊論文 1996 High-responsivity InGaAs metal-semiconductor-metal photodetectors with semi-transparent Schottky contacts Yuang,RH; Chyi,JI; Chan,YJ; Lin,W; Tu,YK
    [電機工程研究所] 期刊論文 1995 HIGH-RESPONSIVITY INGAAS MSM PHOTODETECTORS WITH SEMITRANSPARENT SCHOTTKY CONTACTS YUANG,RH; CHYI,JI; CHAN,YJ; LIN,W; TU,YK
    [電機工程研究所] 期刊論文 1995 HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER YUANG,RH; SHIEH,HC; CHIEN,YJ; CHAN,YJ; CHYI,JI; LIN,W; TU,YK

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