矽/石英晶圓鍵合之熱壓研究

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姓名

薛少宗(Shao-Zong Xiue) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

矽/石英晶圓鍵合之熱壓研究
(Investigation of Si/Quartz Wafer Bonding for Hot Press)

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摘要(中)

異質材料的晶圓接合技術由於能克服材料本身在磊晶技術上的限制，因而不受限於相異晶格材料，於半導體與光電產業上提供多樣化的複合基板，深具研究發展與商業化價值。其中石英上覆矽(SOQ)晶圓得以應用在微機電系統、平面顯示器、生物醫療等科技領域，但石英與矽晶圓的熱膨脹係數差異甚大，導致接合後加溫同時因熱應力增加造成翹曲、破裂甚至分離，在無法有效退火增加鍵結能的情況下使後續的薄化製程遭受困難。
在研究中試圖從熱壓試驗機(Hot Press)的壓力參數調整出有效抑制因熱應力所衍生出膨脹及形變的問題。利用上、下壓板給予矽/石英晶圓對一夾持力與後續升溫所產生之應力抗衡，結果顯示鍵合溫度足以超越200℃並且晶圓對沒有因熱應力產生剝離。

摘要(英)

Wafer bonding technology of the dissimilar materials can surmount the material itself in the epitaxy technology which is not limited to the different crystal lattice materials. That can provide the compound substrate of diversification at the semiconductor and the optoelectronics industry, and also have research development and commercial value. Quartz on silicon (SOQ) wafer can apply in the science and technology field, such as MEMS, FPD and biomedicine…etc. Because of the mismatch of the quartz and silicon wafer thermal expansion coefficients (CTE), after the joint, thermal stress will be induced and causes the warp, breakage, even to separate. That makes the bonding pairs unable to increase the bonding energy on the effective annealing process.
In this study, we attempts to find out the pressure parameters of the hot press adjustment for effective inhibition of thermal stress generated due to the expansion and deformation problems. The top plate and the bottom plate give the silicon/quartz wafer pair clamping force and following resistance the stress generated by heating. The results show that the bonding temperature can over than 200℃ and the bonding pair wouldn’t be separated by the thermal stress.

關鍵字(中)

★ 晶圓鍵合
★ 石英上覆矽
★ 熱壓試驗機

關鍵字(英)

★ SOQ
★ hot press
★ wafer bonding

論文目次

摘要..........................................Ⅰ
英文摘要......................................Ⅱ
誌謝..........................................Ⅲ
總目錄........................................Ⅵ
圖目錄........................................Ⅸ
表目錄.......................................XII
第一章緒論...............................................1
1.1 研究背景..........................................1
1.2 研究動機..........................................3
第二章文獻回顧...........................................6
2.1 晶圓鍵合技術......................................6
2.1.1 直接鍵合....................................7
2.1.2 低溫鍵合...................................10
2.1.3 陽極鍵合...................................11
2.1.4 共晶鍵合...................................12
2.1.5 黏著鍵合...................................13
2.1.6 玻璃介質鍵合...............................14
2.2 薄膜轉移相關技術.................................14
2.2.1 BESOI......................................14
2.2.2 ELTRAN.....................................15
2.2.3 Smart-Cut® Process..........................16
2.3 石英與矽鍵合技術研究.............................17
2.3.1 相異材料物理和機械性質影響.................17
2.3.2 長時程退火與蝕刻方法.......................18
2.3.3 電漿處理...................................18
2.3.4 硼-氫離子佈植..............................19
2.3.5 磊晶矽(硼/鍺)層............................20
第三章實驗方法與步驟....................................36
3.1 實驗目的.........................................36
3.2 實驗準備與流程...................................36
3.2.1 實驗機台...................................36
3.2.2 晶圓準備...................................37
3.2.3 黏著鍵合...................................37
3.2.4 直接熱處理.................................38
3.2.3 負載壓力熱處理.............................38
第四章實驗結果與討論....................................44
4.1 矽/石英晶圓鍵合之熱壓研究........................44
4.1.1 直接熱處理.................................44
4.1.2 負載壓力熱處理.............................45
4.1.3 應力現象探討...............................46
4.1.4 壓力與溫度變化.............................47
第五章結論與未來展望....................................58
5.1 結論.............................................58
5.2 未來展望.........................................59
參閱文獻.................................................60

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指導教授

李天錫(Tien-Hsi Lee)

審核日期

2010-7-26

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