摘要(英) |
Anodic alumina oxide (AAO) has several advantages: easy fabrication, huge area, good regularity, and tunable periods. The deposition and etching nano-mask or specific Bowl-Al geometry, which are fabricated through AAO method, had been applied on solar cells and photonics-crystal waveguide extensively. In this study, we fabricate two structures: nano-mask and Al bulk with nano bowl geometry. Besides, apply the Al bulk with nano bowl geometry as the substrate of n-i-p a-Si:H thin film solar cells to enhance light trapping.
In the fabrication of Bowl-Al substrate, we use chemical polish, electrical-chemical polish, and multi-step anodization to promote planarization and regularity of pores or pre-site Al, respectively. We utilize 0.5M, 0.1M NaOH and 10wt% H3PO4 to remove Al2O3; the 10wt% H3PO4 has better isotropic etching. The fabricated periods from 41nm to 126.5nm shows linear relation d=-23.64+2.158V when the voltages varies from 30V to 70V. The mixed solution of CuSO4:HCl:DI Water=3g:20ml:20ml is applied to remove Al while fabricating Al2O3 nano-mask with floating method.
The periodic Bowl-Al substrate (fabricated through AAO method) is applied as the substrate of n-i-p hydrogenated amorphous silicon thin film solar cells. The original Fabry-Perot resonance of thin film stacks supports light trapping and it increases the light absorption of cells. Additionally, the excitation of surface plasmon polaritons (SPPs) on the periodic metal surface was predicted. However, the dispersion curve of SPPs does not present in the angle-resolved reflectance spectrum due to the fabricated Bowl-Al structure presents periodic property in small domain.
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參考文獻 |
[1-1]A. P. Li,a) F. Mu¨ ller, A. Birner, K. Nielsch, and U. Go¨sele,
JAP, 84, 11, (1998)
[1-2]S. Z. Chu, Journal of The Electrochemical Society.153, (2006)
[1-3]Yong Lei*and Wai-Kin Chim, Chem. Mater.17, (2005)
[1-4]Keisuke Nakayama, Katsuaki Tanabe, and Harry A. Atwater, Appl. Phys.
Lett.93, 121904, (2008)
[1-5]Jinsub Choi, Chem. Mater.15, (2003)
[1-6]Y. Piao, H. Kim, Chem. Commun.2898, (2003).
[1-7]W.B. Choi, J.U. Chu, K.S. Jeong, E.J. Bae, J.W. Lee, J.J. Kim, J.O.
Lee, Appl. Phys. Lett. 79, (2001).
[1-8]Alongkarn Chutinan, Makoto Okano, and Susumu Nodab, Appl. Phys. Lett.80, No.10, (2002)
[1-9]Hitoshi Sai, Hiroyuki Fujiwara, Michio Kondo, and Yoshiaki
Kanamori, Appl. Phys. Lett.93, (2008)
[2-1]V P Parkhutik and V I Shershulsky, J. Phys. D: Appl. Phys. 25, (1992)
[2-2]O. Jessensky, F. Mu¨ ller,a) and U. Go¨sele, Appl. Phys. Lett. 72, 1998
[2-3]A. P. Li,a) F. Mu¨ ller, A. Birner, K. Nielsch, and U. Go¨sele, JAP. 84,
(1998)
[2-4]Michael Berginski,a_ Jürgen Hüpkes, Melanie Schulte, Gunnar Schöpe,
Helmut Stiebig, and Bernd Rechb, J.Appl. Phys 101, (2007)
[2-5]Chitra Agashe*, Oliver Kluth, Gunnar Schope, Hilde Siekmann, Jurgen
Hupkes, Bernd Rech, Thin Solid Films 442 167–172 (2003)
[2-6]Jianhua Hu and Roy G. Gordon, J. Appl. Phys. 71 (2) (1992)
[2-7]Sylvie Faÿ , Jérôme Steinhauser, Nuno Oliveira, Evelyne Vallat-Sauvain,
Christophe Ballif, Thin Solid Films 515 8558–8561 (2007)
[2-8]Hitoshi Sai and Michio Kondo, J. Appl. Phys. 105, 094511 (2009)
[2-9]Hitoshi Sai, Hiroyuki Fujiwara, Michio Kondo, and Yoshiaki Kanamori
Appl. Phys. Lett.93, 143501 (2008)
[2-10]邱國斌、蔡定平,金屬表面電漿簡介,物理雙月刊(二十八捲二期)
2006年4月
[3-1]Hideki Masuda* and Kenji Fukuda, SCIENCE, 268, 1466 (1995)
[3-2] Yong Lei*and Wai-Kin Chim, Chem. Mater.17, (2005)
[3-3]蔡曜璘,國立東華大學電子研究所論文初稿,氮化銦鎵/氮化鎵藍光發
光二極體奈米結構的角度解析光激發螢光光譜之研究
[4-1]A. P. Li,a) F. Mu¨ ller, A. Birner, K. Nielsch, and U. Go¨sele, JAP, 84, 11,
1998
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