微透鏡陣列對於提昇GaN LED光萃取效率之研究

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：23

、訪客IP：3.21.241.17

姓名

李俊虢(Chun-Guo Lee) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

微透鏡陣列對於提昇GaN LED光萃取效率之研究
(Enhancement of light extraction efficiency for GaN LEDsby micro lens array)

相關論文

★ 奈米電漿子感測技術於生物分子之功能分析	★ 表面結構擴散片之設計、製作與應用
★ 結合柱狀透鏡陣列之非成像車頭燈光型設計	★ CCD 量測儀器之研究與探討
★ 鈦酸鋇晶體非均向性自繞射之研究及其在光資訊處理之應用	★ 多光束繞射光學元件應用在DVD光學讀取頭之設計
★ 高位移敏感度之全像多工光學儲存之研究	★ 利用亂相編碼與體積全像之全光學式光纖感測系統
★ 體積光柵應用於微物3D掃描之研究	★ 具有偏極及光強分佈之孔徑的繞射極限的研究
★ 三維亂相編碼之體積全像及其應用	★ 透鏡像差的量測與MTF的驗證
★ 二位元隨機編碼之全像光學鎖之研究	★ 亂相編碼於體積全像之全光學分佈式光纖感測系統之研究
★ 自發式相位共軛鏡之相位穩定與應用於自由空間光通訊之研究	★ 體積全像空間濾波器應用於物體三度空間微米級位移之量測

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

[檢視]

[下載]

本電子論文使用權限為同意立即開放。
已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。
請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。

摘要(中)

本論文中，我們以蒙地卡羅光線追跡法為基礎，建立了LED光萃取效率之光學模型，利用此模型分析GaN LED在不同微透鏡陣列結構下，光萃取效率的變化，探討當透鏡深寬比與表面填充率改變時，其對於晶片之光萃取效率影響；最後，在眾多光萃取機制中，尋找出光萃取效率之最佳值以及最佳結構參數。

摘要(英)

In this thesis, we study light extraction efficiency of LEDs based on the simulation with Monte Carlo ray tracing. We analyze the light extraction efficiency for GaN LEDs with implanting different micro lens arrays with different aspect ratios and fill factors. Finally, we present the optimum structure parameters for the enhancement light extraction efficiency of GaN-based LEDs.

關鍵字(中)

★ 表面粗化
★ 光萃取效率
★ 微透鏡陣列
★ 圖案式藍寶石基板

關鍵字(英)

★ micro lens array
★ patterned sapphire substrate
★ surface texture.
★ light extraction efficiency

論文目次

摘要 I
Abstract II
致謝 III
目錄 IV
圖索引 VII
表索引 XIII
第一章緒論 1
1-1 前言 1
1-2 研究背景 2
1-3 研究動機 4
1-4 論文大綱 5
第二章 LED之光學特性分析 7
2-1 LED發光原理 7
2-2 LED發光效率 10
2-3 LED光萃取效率機制 14
2-3-1 全反射損耗 14
2-3-2 Fresnel損耗 16
2-3-3 材料吸收效應 17
2-4 LED光萃取結構 18
2-4-1 電流阻障層與窗口層 18
2-4-2 底部反射層 20
2-4-3 晶圓接合與覆晶接合 21
2-4-4 晶片塑形 23
2-4-5 表面粗化 25
2-4-6 圖案式藍寶石基板 27
2-4-7 封裝 28
第三章 LED光萃取模型之建立 30
3-1 蒙地卡羅光線追跡法 30
3-2 LED光萃取模型與模擬參數 31
3-3 材料吸收與光子循環複合效應 35
3-4 主動層吸收效應與分析 37
第四章微透鏡陣列結構之光萃取效率分析 40
4-1 圖案式基板之光萃取效率分析 40
4-2 p-GaN表面粗化之光萃取效率分析 44
4-3 圖案化基板加上p-GaN表面粗化之光萃取效率分析 48
4-4 覆晶接合之光萃取效率分析 51
4-5 晶片塑型之光萃取效率分析 55
第五章結論 63
參考文獻 66
中英文名詞對照表 70

參考文獻

[1] D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O, Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, "Illumination with Solid State Lighting Technology," IEEE J. Selected Topics in Quantum Electron 8, 310-320 (2002).
[2] A. Zukauskas, M. S. Shur, and R. Caska, Introduction to Solid-state Lighting (John Wiley & Sons, New York, 2002).
[3] E. F. Schubert, and J. K. Kim, "Solid-state light sources becoming smart," Science 308, 1274-1278 (2005).
[4] U.S. Department of energy, http://www.energy.gov/.
[5] LEDinside, http://www.ledinside.com/.
[6] H. J. Round, "A note on carborundum," Electrical world 49, 309-310 (1907).
[7] G. Destriau, "AC electroluminesence in ZnS," J. Chimie Phys. 33, 587 (1936).
[8] H. Welker, "New Semiconducting Compounds II," Z. Naturforsch., 8a, 248-251 (1953).
[9] N. Holonyak and S. F. Bevacqua, "Coherent (visible) light emission form Ga(As1-xPx) junctions," Appl. Phys. Lett. 1, 82-83 (1962).
[10] J. W. Allen, M. E. Moncaster, and J. Starkiewicz, "Electroluminescent devices using carrier injection in gallium phosphide," Solid-State Electron. 6, 95-102 (1964).
[11] H. G. Grimmeiss and H. J. Scholz, "Efficiency of recombination radiation in GaP," Phys. Lett. 8, 233-235 (1964).
[12] C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G., Craford, and V. M. Robbins, "High performance AlInGaP visible light emitting diodes," Appl. Phys. Lett. 57, 2937-2939 (1990).
[13] H. Sugawara, M. Ishikawa, and G. Hatakoshi, "High-efficiency InAlGaP/GaAs visible light-emitting diodes," Appl. Phys. Lett. 58, 1010-1012 (1991).
[14] Y. Koide, N. Itoh, K. Itoh, N. Sawaki, and I. Akasaki, "Effect of AlN buffer layer on AlGaN/a-Al2O3 heterepitaxial growth by metal organic vapor phase epitaxy," Jpn. J. Appl. Phys. 27, 1156-1161 (1988).
[15] S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, "Thermal annealing effects on p-type Mg-doped GaN films," Jpn. J. Appl. Phys. 31, L139-L142 (1992).
[16] S. Nakamura, T. Mukai, and M. Senoh, "High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes," J. Appl. Phys. 76, 8180-8191 (1994).
[17] S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, "Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes," Jpn. J. Appl. Phys. 34, L1332-L1335 (1995).
[18] Y. Shimizu, K. Sakano, Y. Noguchi, and T. Moriguchi, "Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material," U.S. Pat. 5,998,925 (1999).
[19] Cree, http://www.cree.com/.
[20] 孫慶成，LED的效率極限與照明光學設計的極致，LED固態照明研討會論文集，中華民國九十八年。
[21] Schnitzer, E. Yablonovitch, C. Carneau, T. J. Gmitter, and A. Scherer, "30% external quantum efficiency from surface textured, thin-film light emitting diodes," Appl. Phys. Lett. 63, 2174-2176 (1993).
[22] T. Fjii, Y. Gao, R. Sharma, E. L. Hu, S. P. Danbaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-base light emitting diodes via surface roughening," Appl. Phys. Lett. 84, 855-857 (2004).
[23] J. J. Wierer, D. A. Steigerwald, M. R. Krames, J. J. O'Shea, M. J. Ludowise, N. F. Gardner, R. S. Kern, and S. A. Stockman, "High-power AlGaInN flip-chip light-emitting diodes," Appl. Phys. Lett. 78, 3379-3381 (2001).
[24] Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. Danbaars, and S. Nakamura, "Roughening hexagonal surface morphology on Laser lift-off (LLO) N face GaN with simple photo-enhanced chemical wet etching," Jap. J. Appl. Phys. 43, L637-L639 (2004).
[25] E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, Cambridge, 2006).
[26] D. A. Neamen, Semiconductor Physics and Devices (McGraw-Hill, New York, 2003).
[27] Wikipedia, http://www.wikipedia.org/.
[28] 郭浩中、賴芳儀和郭守義，LED原理與應用，五南書局，臺北市，中華民國九十八年。
[29] D. K. Cheng, Field and Wave Electromagnetics, 2nd ed. (Addison-Wesley, America, 1989).
[30] C. A. Gaw, S. Ariz, D. L. Rode, St. Louis, "Electrical Contact for an LED," U.S. Pat. 4,864,370 (1989).
[31] H. C. Wang, Y. K. Su, Y. H. Chung, C. L. Lin, W. B. Chen, and S. M. Chen, "AlGaInP light emitting diode with a current-blocking structure," Solid-State Electronics 49, 37-41 (2005).
[32] K. H. Huang, J. G. Yu, C. P. Kuo, R. M. Fletcher, T. D. Osentowski, L. J. Stinson, and M. G. Craford, "Twofold efficiency improvement in high performance AlGalnP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer," Appl. Phys. Lett. 61, 1045-1047 (1992).
[33] R. H. Horng, D.S. Wuu, S. C. Wei, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin, "AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology," Appl. Phys. Lett. 75, 154-156 (1999).
[34] R. H. Horng, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin, "AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding," Appl. Phys. Lett. 75, 3054-3056 (1999).
[35] F. A. Kish and R. M. Fletcher, "AlGaInP light-emitting diodes" in High Brightness Light-Emitting Diodes (Academic, San Diego, 1997).
[36] F. A. Kish, F. M. Sterakna, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, and M. G. Craford, "Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al Ga ) In P/GaP light-emitting diodes," Appl. Phys. Lett. 64, 2839-2841 (1994).
[37] R. H. Horng, D. S. Wuu, S. C. Wei, C. Y. Tseng, M. F. Huang, K. H. Chang, P. H. Liu, and K. C. Lin, "AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding," Appl. Phys. Lett. 75, 3054-3056 (1999).
[38] M. R. Krames, M. O. Holcomb, G. E. Hofler, C. C. Coman, E. I. Chen, I. H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J. W. Huang, S. A. Stockman, F. A. Kish, and M. G. Craford, "High-power truncated-pyramid (AlxGa1-x)0.5 In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency," Appl. Phys. Lett. 75, 2365-2367 (1999).
[39] M. R. Krames, O. B. Shchekin, R. M. Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Carford, "Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting," IEEE J. Disp. Techno. 3, 160-175 (2007).
[40] Osram Opto Semiconductors, http://www.osram-os.com/.
[41] E. Yablonovitch, "Inhibited Spontaneous Emission in Solid-State Physics and Electronics," Phys. Rev. Lett. 58, 2059-2062 (1987).
[42] S. John, "Strong localization of photons in certain disordered dielectric superlattices," Phys. Rev. Lett. 58, 2486-2489 (1987).
[43] Panasonic, http://www.panasonic.co.jp/.
[44] I. Schnitzer, E. Yablonvitch, C. Carneau, T. J. Gmitter, and A. Scherer, "30% external quantum efficiency from surface textured, thin-film light emitting diodes," Appl. Phys. Lett. 63, 2174-2176 (1993).
[45] T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett. 84, 855-857 (2004).
[46] D. S. Han, J. Y. Kim, S. I. Na, S. H. Kim, K. D. Lee, B. Kim, and S. J. Park, "Improvement of light extraction efficiency of flip-chip light-emitting diode by texturing the bottom side surface of sapphire substrate," IEEE Photo. Techno. Lett. 18, 1406-1408 (2006).
[47] P. C. Tsai, R. W. Chuang, and Y. K. Su, "Lifetime Tests and Junction-Temperature Measurement of InGaN Light-Emitting Diodes Using Patterned Sapphire Substrates," IEEE/OSA Journal of Lightwave Technology 25, 591-596 (2007).
[48] Y. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, "High Brightness GaN-Based Light-Emitting Diodes," Journal of Display Technology 3, 118-125 (2007).
[49] C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, "Optimization of electroluminescent efficiencies for vapor-grown GaAsP diodes" J. Electrochem. Soc. 116, 248-253 (1969).
[50] 李宗憲，氮化鎵發光二極體之光萃取效率分析與晶片設計，國立中央大學光電科學研究所博士論文，中華民國九十七年。
[51] D. Z. Ting and T. C. McGill, "Monte Carlo simulation of light-emitting diode light-extraction characteristics," Opt. Eng. 34, 3545-3553 (1995).
[52] S. J. Lee, "Analysis of light-emitting diode by Monte Carlo photo simulation," Appl. Opt. 40, 1427-1437 (2001).
[53] C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, "Photonic Crystal LEDs designing light extraction," Laser & Photon. Rev. 3, 262-286 (2009).
[54] Ch. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, "Analysis of the emission characteristics of photonic crystal LEDs," Proc. of SPIE 6989, 69890L1-69890L9 (2008).
[55] T. X. Lee, C. Y. Lin, S. H. Ma, and C. C. Sun, "Analysis of position-dependent light extraction of GaN-based LED," Optics Express 13, 4175-4179 (2005).
[56] 蔡尚祐，LED晶片微結構對光萃取效率及指向性之模擬與分析，光電科學與工程學系碩士論文，中華民國九十八年。
[57] H. Ye, G. W. Wicks, and P. M. Fauchet, "Hot electron relaxation time in GaN," Appl. Phys. Lett. 74, 711-713 (1999).
[58] H. Ye, G. W. Wicks, and P. M. Fauchet, "Hot hole relaxation dynamics in p-GaN," Appl. Phys. Lett. 77, 185-1187 (2000).
[59] H. Hasegawa, Y. Kamimura, K. Edagawa, and I. Yonenaga, "Dislocation-related optical absorption in plastically deformed GaN," J. Appl. Phys. 102, 026103-026127 (2007).

指導教授

孫慶成(Sun Ching-Cherng)

審核日期

2010-7-29

推文