摘要(英) |
In this thesis, the basic linear components, which consist of voltage source, capacitor, and voltage-control current source, are employed to simulate the non-linear devices. The circuit parameters are explicitly defined at the main program for easier recognition and adjustment.To simulate 2-D semiconductor devices by linear elements, the nonlinear Poisson equation and the nonlinear carrier continuity equations are replaced by the linear voltage-controlled current source in the environment of the Newton-Raphson iteration. The matrix A in ADV = B include partial differentiation items which are obtained by both numerical differentiation and analytical differentiation in this thesis. The simulation results show a good accuracy
between two methods.
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