分子電晶體之穿隧電流與熱電效應

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姓名

鄭安棣(An-li Cheng) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

分子電晶體之穿隧電流與熱電效應
(Tunneling current and thermoelectric effects in a single molecular transistor with strong electron phonon interactions)

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摘要(中)

本篇論文利用安德生模型在電子與聲子交互作用力下，描述單分子電晶體的結構，並理論性地探討其穿隧電流、電導、熱導、熱電係數以及熱電優值。由於很強的電子與聲子交互作用力，在低溫區域可以很清楚地看到穿隧電流以及熱電係數會藉由聲子協助穿隧產生新的峰值。然而當溫度增加時，聲子協助穿隧的效應逐漸變得不明顯。此外在不考慮電子與聲子交互作用力時，庫倫阻斷區域的熱電優值可以得到一個令人期待的值，一旦考慮電子與聲子交互作用力，熱電優值則會被抑制的很嚴重，以至於很難達到Carnot效應，這歸咎於多重聲子輔助穿隧造成熱導值的提升。我們可以藉由量測熱電係數來觀察高階聲子協助穿隧的過程。

摘要(英)

This thesis theoretically studies the tunneling current, electrical conductance, thermal power, electron thermal conductance and figure of merit of a single molecular quantum dot by using the Anderson model with strong coupling between molecular vibration modes and localized electron [or “electron-phonon interactions ”(EPIs)]. Due to strong EPIs, the phonon side bands of tunneling current and thermal power are observed at low temperature, but readily washed out with increasing temperature. In the absence of EPIs, the figure of merit (ZT) of molecular QD junctions exhibits an impressive value in the Coulomb blockade regime .The seriously reduction of ZT is observed in the presence of strong EPIs. The suppression of ZT is mainly attributed to the considerable enhancement of electron thermal conductance due to the involve of multiple phonon assisted tunneling processes. We also find that Carnot efficiency vanishes in the strong EPIs. We can resolve the high-order phonon assisted tunneling processes by using measurement of thermal power.

關鍵字(中)

★ 分子電晶體
★ 熱電效應

關鍵字(英)

★ thermoelectric effects
★ molecular transistor

論文目次

摘要 I
Abstract II
誌謝 III
目錄 IV
圖目錄 VI
表目錄 VIII
第一章導論 1
1-1電晶體簡介與發展近況 1
1-1-1電晶體簡介 1
1-1-2 分子電晶體簡介 1
1-2熱電材料 3
1-2-1 熱電材料簡介 3
1-2-2 熱電優值ZT 5
1-3 論文架構 6
第二章分子電晶體與熱電元件之操作原理 8
2-1 系統模型 8
2-2 穿隧電流與熱流方程式 10
2-3 電子佔據率與格林函數 11
2-4 線性操作的熱電元件與參數 14
第三章分子電晶體的穿隧電流 16
3-1 定性分析 16
3-2系統偏壓在不同EPIs對穿隧電流影響 18
3-2-1系統偏壓在不同溫度對穿隧電流影響 21
3-3閘極偏壓在不同EPIs對穿隧電流影響 24
3-4 小結 26
第四章熱電效應的模擬 27
4-1 前言 27
4-2 內階庫倫交互作用力對ZT的影響 28
4-3 電子與聲子交互作用力對ZT的影響 30
4-4 量子點能階偏移對ZT的影響 33
4-5 穿隧率對ZT的影響 35
4-6 調控閘極電位對ZT的影響 38
第五章結論 42
參考文獻 43

參考文獻

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指導教授

郭明庭(David. M. T. Kuo)

審核日期

2010-7-15

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